Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3 /Si substrates

Hong Shen; Yanhong Gao; Peng Zhou; Jianhua Ma; Jinglan Sun; Xiangjian Meng; Junhao Chu

doi:10.1063/1.3076893

Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO₃ thin films prepared on LaNiO₃ /Si substrates

Hong Shen^*
, Yanhong Gao
, Peng Zhou
, Jianhua Ma
, Jinglan Sun
, Xiangjian Meng
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Thin films of (Ba,Sr)TiO₃ (BST) on LaNiO₃ /Si substrates were deposited using rf magnetron sputtering at various (O ₂ /Ar+ O₂) mixing ratios (OMRs). The crystallinity of the films improved significantly as the OMR increased. The dielectric constant increased with increasing OMR and reached a maximum value at 50% OMR. The leakage current density decreased with increasing oxygen flow because of the decrease of oxygen vacancies in films and had a minimum value at 50% OMR. The results for the dielectric constant were interpreted in terms of polarization and stress effect. In addition, the BST films deposited at 600 °C and 50% OMR exhibited a higher figure of merit (FOM), and the value of FOM is calculated to be 40.23.

Original language	English
Article number	061637
Journal	Journal of Applied Physics
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.3076893
State	Published - 2009
Externally published	Yes

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title = "Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3 /Si substrates",

abstract = "Thin films of (Ba,Sr)TiO3 (BST) on LaNiO3 /Si substrates were deposited using rf magnetron sputtering at various (O 2 /Ar+ O2) mixing ratios (OMRs). The crystallinity of the films improved significantly as the OMR increased. The dielectric constant increased with increasing OMR and reached a maximum value at 50\% OMR. The leakage current density decreased with increasing oxygen flow because of the decrease of oxygen vacancies in films and had a minimum value at 50\% OMR. The results for the dielectric constant were interpreted in terms of polarization and stress effect. In addition, the BST films deposited at 600 °C and 50\% OMR exhibited a higher figure of merit (FOM), and the value of FOM is calculated to be 40.23.",

author = "Hong Shen and Yanhong Gao and Peng Zhou and Jianhua Ma and Jinglan Sun and Xiangjian Meng and Junhao Chu",

year = "2009",

doi = "10.1063/1.3076893",

language = "英语",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3 /Si substrates

AU - Shen, Hong

AU - Gao, Yanhong

AU - Zhou, Peng

AU - Ma, Jianhua

AU - Sun, Jinglan

AU - Meng, Xiangjian

AU - Chu, Junhao

PY - 2009

Y1 - 2009

N2 - Thin films of (Ba,Sr)TiO3 (BST) on LaNiO3 /Si substrates were deposited using rf magnetron sputtering at various (O 2 /Ar+ O2) mixing ratios (OMRs). The crystallinity of the films improved significantly as the OMR increased. The dielectric constant increased with increasing OMR and reached a maximum value at 50% OMR. The leakage current density decreased with increasing oxygen flow because of the decrease of oxygen vacancies in films and had a minimum value at 50% OMR. The results for the dielectric constant were interpreted in terms of polarization and stress effect. In addition, the BST films deposited at 600 °C and 50% OMR exhibited a higher figure of merit (FOM), and the value of FOM is calculated to be 40.23.

AB - Thin films of (Ba,Sr)TiO3 (BST) on LaNiO3 /Si substrates were deposited using rf magnetron sputtering at various (O 2 /Ar+ O2) mixing ratios (OMRs). The crystallinity of the films improved significantly as the OMR increased. The dielectric constant increased with increasing OMR and reached a maximum value at 50% OMR. The leakage current density decreased with increasing oxygen flow because of the decrease of oxygen vacancies in films and had a minimum value at 50% OMR. The results for the dielectric constant were interpreted in terms of polarization and stress effect. In addition, the BST films deposited at 600 °C and 50% OMR exhibited a higher figure of merit (FOM), and the value of FOM is calculated to be 40.23.

UR - https://www.scopus.com/pages/publications/63749113451

U2 - 10.1063/1.3076893

DO - 10.1063/1.3076893

M3 - 文章

AN - SCOPUS:63749113451

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 061637

ER -

Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO₃ thin films prepared on LaNiO₃ /Si substrates

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