Effect of Mn doping on the electrical properties of PbZr0.5Ti0.5O3 ferroelectric thin film

Fu Wen Shi; Xiang Jian Meng; Gen Shui Wang; Tie Lin; Ya Wei Li; Jian Hua Ma; Jin Lan Sun; Jun Hao Chu

Effect of Mn doping on the electrical properties of PbZr_0.5Ti_0.5O₃ ferroelectric thin film

Fu Wen Shi, Xiang Jian Meng, Gen Shui Wang, Tie Lin, Ya Wei Li, Jian Hua Ma, Jin Lan Sun, Jun Hao Chu

Research output: Contribution to journal › Article › peer-review

Abstract

Manganese-doped lead zirconate titanate Pb(Zr_0.5Ti_0.5)_1-xMnxO₃ (PMZT) with x=0, 0.01, 0.02, 0.03 film were prepared by using sol-gel processing techniques on LaNiO₃/Si(100) substrates. Pt/Pb(Zr_0.5Ti_0.5)_1-xMnxO₃ (PMZT)/LaNiO₃ capacitor were fabricated. It shows excellent ferroelectricity. Asymmetric switching behavior of the polarization was observed under the external applied electric field. The asymmetric switching behavior of the polarization becomes larger with the increasing of Mn dopant concentration. The remnant polarization and coercive field decrease with the Mn content increasing. The dielectric constant of PMZT films decreases with the doping Mn decrease at low frequency. The leakage current density increases approximately linearly with voltage. The samples display nearly ohmic behavior. The leakage current increases with the increasing of Mn dopant under the same stress voltage.

Original language	English
Pages (from-to)	211-214
Number of pages	4
Journal	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
Volume	11
Issue number	2
State	Published - Jun 2005
Externally published	Yes

Keywords

Dielectric properties
Ferroelectric thin films
Remnant polarization

Cite this

@article{51ef8715757f4ca69c78cc08e53fbd19,

title = "Effect of Mn doping on the electrical properties of PbZr0.5Ti0.5O3 ferroelectric thin film",

abstract = "Manganese-doped lead zirconate titanate Pb(Zr0.5Ti0.5)1-xMnxO3 (PMZT) with x=0, 0.01, 0.02, 0.03 film were prepared by using sol-gel processing techniques on LaNiO3/Si(100) substrates. Pt/Pb(Zr0.5Ti0.5)1-xMnxO3 (PMZT)/LaNiO3 capacitor were fabricated. It shows excellent ferroelectricity. Asymmetric switching behavior of the polarization was observed under the external applied electric field. The asymmetric switching behavior of the polarization becomes larger with the increasing of Mn dopant concentration. The remnant polarization and coercive field decrease with the Mn content increasing. The dielectric constant of PMZT films decreases with the doping Mn decrease at low frequency. The leakage current density increases approximately linearly with voltage. The samples display nearly ohmic behavior. The leakage current increases with the increasing of Mn dopant under the same stress voltage.",

keywords = "Dielectric properties, Ferroelectric thin films, Remnant polarization",

author = "Shi, \{Fu Wen\} and Meng, \{Xiang Jian\} and Wang, \{Gen Shui\} and Tie Lin and Li, \{Ya Wei\} and Ma, \{Jian Hua\} and Sun, \{Jin Lan\} and Chu, \{Jun Hao\}",

year = "2005",

month = jun,

language = "英语",

volume = "11",

pages = "211--214",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

issn = "1007-4252",

publisher = "Chinese Academy of Sciences",

number = "2",

}

TY - JOUR

T1 - Effect of Mn doping on the electrical properties of PbZr0.5Ti0.5O3 ferroelectric thin film

AU - Shi, Fu Wen

AU - Meng, Xiang Jian

AU - Wang, Gen Shui

AU - Lin, Tie

AU - Li, Ya Wei

AU - Ma, Jian Hua

AU - Sun, Jin Lan

AU - Chu, Jun Hao

PY - 2005/6

Y1 - 2005/6

N2 - Manganese-doped lead zirconate titanate Pb(Zr0.5Ti0.5)1-xMnxO3 (PMZT) with x=0, 0.01, 0.02, 0.03 film were prepared by using sol-gel processing techniques on LaNiO3/Si(100) substrates. Pt/Pb(Zr0.5Ti0.5)1-xMnxO3 (PMZT)/LaNiO3 capacitor were fabricated. It shows excellent ferroelectricity. Asymmetric switching behavior of the polarization was observed under the external applied electric field. The asymmetric switching behavior of the polarization becomes larger with the increasing of Mn dopant concentration. The remnant polarization and coercive field decrease with the Mn content increasing. The dielectric constant of PMZT films decreases with the doping Mn decrease at low frequency. The leakage current density increases approximately linearly with voltage. The samples display nearly ohmic behavior. The leakage current increases with the increasing of Mn dopant under the same stress voltage.

AB - Manganese-doped lead zirconate titanate Pb(Zr0.5Ti0.5)1-xMnxO3 (PMZT) with x=0, 0.01, 0.02, 0.03 film were prepared by using sol-gel processing techniques on LaNiO3/Si(100) substrates. Pt/Pb(Zr0.5Ti0.5)1-xMnxO3 (PMZT)/LaNiO3 capacitor were fabricated. It shows excellent ferroelectricity. Asymmetric switching behavior of the polarization was observed under the external applied electric field. The asymmetric switching behavior of the polarization becomes larger with the increasing of Mn dopant concentration. The remnant polarization and coercive field decrease with the Mn content increasing. The dielectric constant of PMZT films decreases with the doping Mn decrease at low frequency. The leakage current density increases approximately linearly with voltage. The samples display nearly ohmic behavior. The leakage current increases with the increasing of Mn dopant under the same stress voltage.

KW - Dielectric properties

KW - Ferroelectric thin films

KW - Remnant polarization

UR - https://www.scopus.com/pages/publications/21444453430

M3 - 文章

AN - SCOPUS:21444453430

SN - 1007-4252

VL - 11

SP - 211

EP - 214

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 2

ER -

Effect of Mn doping on the electrical properties of PbZr_0.5Ti_0.5O₃ ferroelectric thin film

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