Effect of LaNiO3 buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg1/3Nb2/3)O 3PbTiO3 thin films

T. Lin; X. J. Meng; J. L. Sun; J. H. Ma; J. H. Chu

doi:10.1007/s00339-004-2905-6

Effect of LaNiO₃ buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg_1/3Nb_2/3)O ₃PbTiO₃ thin films

T. Lin^*
, X. J. Meng
, J. L. Sun
, J. H. Ma
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Pb(Mg_1/3Nb_2/3)O₃PbTiO₃ (PMNT) thin films on Pt/TiO₂/SiO₂/Si substrates with and without a LaNiO₃ (LNO) buffer layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with a certain amount of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffer layer. Cracks are found in the former but not in the latter. The dielectric constant of PMNT thin films on LNO-buffer Pt electrodes is larger than that on bare Pt electrodes. A great lowering of the leakage current is observed in the films with a LNO buffer layer. The improvement in the electrical properties is attributed to both the elimination of cracks and the suppression of pyrochlore phase in the films.

Original language	English
Pages (from-to)	1025-1028
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	81
Issue number	5
DOIs	https://doi.org/10.1007/s00339-004-2905-6
State	Published - Oct 2005
Externally published	Yes

Access to Document

10.1007/s00339-004-2905-6

Cite this

@article{3e70dfe944f94a32b3495aeb98b133be,

title = "Effect of LaNiO3 buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg1/3Nb2/3)O 3PbTiO3 thin films",

abstract = "Pb(Mg1/3Nb2/3)O3PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffer layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with a certain amount of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffer layer. Cracks are found in the former but not in the latter. The dielectric constant of PMNT thin films on LNO-buffer Pt electrodes is larger than that on bare Pt electrodes. A great lowering of the leakage current is observed in the films with a LNO buffer layer. The improvement in the electrical properties is attributed to both the elimination of cracks and the suppression of pyrochlore phase in the films.",

author = "T. Lin and Meng, \{X. J.\} and Sun, \{J. L.\} and Ma, \{J. H.\} and Chu, \{J. H.\}",

year = "2005",

month = oct,

doi = "10.1007/s00339-004-2905-6",

language = "英语",

volume = "81",

pages = "1025--1028",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "5",

}

TY - JOUR

T1 - Effect of LaNiO3 buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg1/3Nb2/3)O 3PbTiO3 thin films

AU - Lin, T.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Ma, J. H.

AU - Chu, J. H.

PY - 2005/10

Y1 - 2005/10

N2 - Pb(Mg1/3Nb2/3)O3PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffer layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with a certain amount of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffer layer. Cracks are found in the former but not in the latter. The dielectric constant of PMNT thin films on LNO-buffer Pt electrodes is larger than that on bare Pt electrodes. A great lowering of the leakage current is observed in the films with a LNO buffer layer. The improvement in the electrical properties is attributed to both the elimination of cracks and the suppression of pyrochlore phase in the films.

AB - Pb(Mg1/3Nb2/3)O3PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffer layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with a certain amount of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffer layer. Cracks are found in the former but not in the latter. The dielectric constant of PMNT thin films on LNO-buffer Pt electrodes is larger than that on bare Pt electrodes. A great lowering of the leakage current is observed in the films with a LNO buffer layer. The improvement in the electrical properties is attributed to both the elimination of cracks and the suppression of pyrochlore phase in the films.

UR - https://www.scopus.com/pages/publications/23944512789

U2 - 10.1007/s00339-004-2905-6

DO - 10.1007/s00339-004-2905-6

M3 - 文章

AN - SCOPUS:23944512789

SN - 0947-8396

VL - 81

SP - 1025

EP - 1028

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 5

ER -

Effect of LaNiO₃ buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg_1/3Nb_2/3)O ₃PbTiO₃ thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this