Effect of in Diffusion on the Property of Blue Light-Emitting Diodes

Yong Ping Zeng; Wen Jie Liu; Guo En Weng; Wan Ru Zhao; Hai Jie Zuo; Jian Yu; Jiang Yong Zhang; Lei Ying Ying; Bao Ping Zhang

doi:10.1088/0256-307X/32/6/064207

Effect of in Diffusion on the Property of Blue Light-Emitting Diodes

Yong Ping Zeng, Wen Jie Liu, Guo En Weng, Wan Ru Zhao, Hai Jie Zuo, Jian Yu, Jiang Yong Zhang, Lei Ying Ying, Bao Ping Zhang^*

^*Corresponding author for this work

Xiamen University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide (ITO) on the wafer surface. The electrical property of the ptype contact is improved and the redshift of photoluminescence (PL) from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy (XPS) demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20 mA, LEDs with ICP-induced In doping show a decrease of 0.3V in the forward voltage and an increase of 23% in the light output, respectively.

Original language	English
Article number	064207
Journal	Chinese Physics Letters
Volume	32
Issue number	6
DOIs	https://doi.org/10.1088/0256-307X/32/6/064207
State	Published - 1 Jun 2015
Externally published	Yes

Access to Document

10.1088/0256-307X/32/6/064207

Cite this

@article{b3642990dacb44469d4f1db3ce3ace47,

title = "Effect of in Diffusion on the Property of Blue Light-Emitting Diodes",

abstract = "In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide (ITO) on the wafer surface. The electrical property of the ptype contact is improved and the redshift of photoluminescence (PL) from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy (XPS) demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20 mA, LEDs with ICP-induced In doping show a decrease of 0.3V in the forward voltage and an increase of 23\% in the light output, respectively.",

author = "Zeng, \{Yong Ping\} and Liu, \{Wen Jie\} and Weng, \{Guo En\} and Zhao, \{Wan Ru\} and Zuo, \{Hai Jie\} and Jian Yu and Zhang, \{Jiang Yong\} and Ying, \{Lei Ying\} and Zhang, \{Bao Ping\}",

year = "2015",

month = jun,

day = "1",

doi = "10.1088/0256-307X/32/6/064207",

language = "英语",

volume = "32",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Effect of in Diffusion on the Property of Blue Light-Emitting Diodes

AU - Zeng, Yong Ping

AU - Liu, Wen Jie

AU - Weng, Guo En

AU - Zhao, Wan Ru

AU - Zuo, Hai Jie

AU - Yu, Jian

AU - Zhang, Jiang Yong

AU - Ying, Lei Ying

AU - Zhang, Bao Ping

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide (ITO) on the wafer surface. The electrical property of the ptype contact is improved and the redshift of photoluminescence (PL) from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy (XPS) demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20 mA, LEDs with ICP-induced In doping show a decrease of 0.3V in the forward voltage and an increase of 23% in the light output, respectively.

AB - In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide (ITO) on the wafer surface. The electrical property of the ptype contact is improved and the redshift of photoluminescence (PL) from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy (XPS) demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20 mA, LEDs with ICP-induced In doping show a decrease of 0.3V in the forward voltage and an increase of 23% in the light output, respectively.

UR - https://www.scopus.com/pages/publications/84938099440

U2 - 10.1088/0256-307X/32/6/064207

DO - 10.1088/0256-307X/32/6/064207

M3 - 文章

AN - SCOPUS:84938099440

SN - 0256-307X

VL - 32

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 6

M1 - 064207

ER -

Effect of in Diffusion on the Property of Blue Light-Emitting Diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this