Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor

Ling Sun; Jianjun Gao; Andreas Werthof

doi:10.1002/mmce.20757

Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor

Ling Sun
, Jianjun Gao^*
, Andreas Werthof

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The influence of guard-ring (GR) on the direct current (DC) and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistors (MOSFETs) is investigated in this study. MOSFETs with four different GRs are fabricated using 90 nm complementary metal oxide semiconductor (CMOS) process, and a detailed comparative study on their device performances is performed. A united DC and small signal equivalent circuit model that takes into the effect of GR is developed. A set of simple, but efficient formulas provide a bidirectional bridge for the S parameters transformation between devices with different GRs. The corresponding model parameters for MOSFETs with different GRs are determined from S parameter on-wafer measurement up to 40 GHz.

Original language	English
Pages (from-to)	259-267
Number of pages	9
Journal	International Journal of RF and Microwave Computer-Aided Engineering
Volume	24
Issue number	2
DOIs	https://doi.org/10.1002/mmce.20757
State	Published - Mar 2014

Keywords

90 nm CMOS technology
deep-submicrometer MOSFETs
guard-ring
parameter extraction
small signal equivalent circuit model

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title = "Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor",

abstract = "The influence of guard-ring (GR) on the direct current (DC) and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistors (MOSFETs) is investigated in this study. MOSFETs with four different GRs are fabricated using 90 nm complementary metal oxide semiconductor (CMOS) process, and a detailed comparative study on their device performances is performed. A united DC and small signal equivalent circuit model that takes into the effect of GR is developed. A set of simple, but efficient formulas provide a bidirectional bridge for the S parameters transformation between devices with different GRs. The corresponding model parameters for MOSFETs with different GRs are determined from S parameter on-wafer measurement up to 40 GHz.",

keywords = "90 nm CMOS technology, deep-submicrometer MOSFETs, guard-ring, parameter extraction, small signal equivalent circuit model",

author = "Ling Sun and Jianjun Gao and Andreas Werthof",

year = "2014",

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volume = "24",

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T1 - Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor

AU - Sun, Ling

AU - Gao, Jianjun

AU - Werthof, Andreas

PY - 2014/3

Y1 - 2014/3

N2 - The influence of guard-ring (GR) on the direct current (DC) and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistors (MOSFETs) is investigated in this study. MOSFETs with four different GRs are fabricated using 90 nm complementary metal oxide semiconductor (CMOS) process, and a detailed comparative study on their device performances is performed. A united DC and small signal equivalent circuit model that takes into the effect of GR is developed. A set of simple, but efficient formulas provide a bidirectional bridge for the S parameters transformation between devices with different GRs. The corresponding model parameters for MOSFETs with different GRs are determined from S parameter on-wafer measurement up to 40 GHz.

AB - The influence of guard-ring (GR) on the direct current (DC) and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistors (MOSFETs) is investigated in this study. MOSFETs with four different GRs are fabricated using 90 nm complementary metal oxide semiconductor (CMOS) process, and a detailed comparative study on their device performances is performed. A united DC and small signal equivalent circuit model that takes into the effect of GR is developed. A set of simple, but efficient formulas provide a bidirectional bridge for the S parameters transformation between devices with different GRs. The corresponding model parameters for MOSFETs with different GRs are determined from S parameter on-wafer measurement up to 40 GHz.

KW - 90 nm CMOS technology

KW - deep-submicrometer MOSFETs

KW - guard-ring

KW - parameter extraction

KW - small signal equivalent circuit model

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U2 - 10.1002/mmce.20757

DO - 10.1002/mmce.20757

M3 - 文章

AN - SCOPUS:84897115636

SN - 1096-4290

VL - 24

SP - 259

EP - 267

JO - International Journal of RF and Microwave Computer-Aided Engineering

JF - International Journal of RF and Microwave Computer-Aided Engineering

IS - 2

ER -

Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor

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Keywords

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