TY - JOUR
T1 - Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films
AU - Wu, Gang
AU - Deng, Hongmei
AU - Wang, Weijun
AU - Zhang, Kezhi
AU - Cao, Huiyi
AU - Yang, Pingxiong
AU - Chu, Junhao
PY - 2014/7
Y1 - 2014/7
N2 - LaAl1-x Co x O3 (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol-gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO 3, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm-1 peak is assigned to A1 mode of perovskite LaAlO3 while the 696 cm-1 peak is caused by the Co-O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 %. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.
AB - LaAl1-x Co x O3 (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol-gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO 3, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm-1 peak is assigned to A1 mode of perovskite LaAlO3 while the 696 cm-1 peak is caused by the Co-O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 %. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.
UR - https://www.scopus.com/pages/publications/84902545194
U2 - 10.1007/s10854-014-1994-z
DO - 10.1007/s10854-014-1994-z
M3 - 文章
AN - SCOPUS:84902545194
SN - 0957-4522
VL - 25
SP - 3137
EP - 3140
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 7
ER -