Effect of annealing temperature on TiO 2-based thin-film-transistor performance

Ni Zhong; Jun Jun Cao; Hisashi Shima; Hiro Akinaga

doi:10.1109/LED.2012.2193658

Effect of annealing temperature on TiO ₂-based thin-film-transistor performance

Ni Zhong^*
, Jun Jun Cao
, Hisashi Shima
, Hiro Akinaga

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

TiO _x thin-film transistors (TFTs) are fabricated using SiO ₂ as gate dielectrics. The enhancement of the electric characteristics is observed after a postannealing processing including the reduction of the threshold voltage V _th, the increase in mobility μ, and the on/off ratio. The effect of the postannealing temperature on both the TiO _xSiO ₂ interfacial bonding structure and the TiO _x crystallinity is investigated. We suggest that the interfacial modification at the TiO _xSiO ₂ interface contributes to the significant reduction of V _th due to the breaking of Si-O-Ti bonding. The improvement of the TiO _x crystallinity and interfacial structure leads to the increase in μ and in the on/off ratio. The low-temperature annealing treatment at 200 °C is very effective to improve the TiO _xSiO ₂ interface structure.

Original language	English
Article number	6199956
Pages (from-to)	1009-1011
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2193658
State	Published - 2012

Keywords

Annealing
semiconductor-insulator interfaces
thin-film transistors (TFTs)
titanium oxide (TiO )

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title = "Effect of annealing temperature on TiO 2-based thin-film-transistor performance",

abstract = "TiO x thin-film transistors (TFTs) are fabricated using SiO 2 as gate dielectrics. The enhancement of the electric characteristics is observed after a postannealing processing including the reduction of the threshold voltage V th, the increase in mobility μ, and the on/off ratio. The effect of the postannealing temperature on both the TiO xSiO 2 interfacial bonding structure and the TiO x crystallinity is investigated. We suggest that the interfacial modification at the TiO xSiO 2 interface contributes to the significant reduction of V th due to the breaking of Si-O-Ti bonding. The improvement of the TiO x crystallinity and interfacial structure leads to the increase in μ and in the on/off ratio. The low-temperature annealing treatment at 200 °C is very effective to improve the TiO xSiO 2 interface structure.",

keywords = "Annealing, semiconductor-insulator interfaces, thin-film transistors (TFTs), titanium oxide (TiO )",

author = "Ni Zhong and Cao, \{Jun Jun\} and Hisashi Shima and Hiro Akinaga",

year = "2012",

doi = "10.1109/LED.2012.2193658",

language = "英语",

volume = "33",

pages = "1009--1011",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Effect of annealing temperature on TiO 2-based thin-film-transistor performance

AU - Zhong, Ni

AU - Cao, Jun Jun

AU - Shima, Hisashi

AU - Akinaga, Hiro

PY - 2012

Y1 - 2012

N2 - TiO x thin-film transistors (TFTs) are fabricated using SiO 2 as gate dielectrics. The enhancement of the electric characteristics is observed after a postannealing processing including the reduction of the threshold voltage V th, the increase in mobility μ, and the on/off ratio. The effect of the postannealing temperature on both the TiO xSiO 2 interfacial bonding structure and the TiO x crystallinity is investigated. We suggest that the interfacial modification at the TiO xSiO 2 interface contributes to the significant reduction of V th due to the breaking of Si-O-Ti bonding. The improvement of the TiO x crystallinity and interfacial structure leads to the increase in μ and in the on/off ratio. The low-temperature annealing treatment at 200 °C is very effective to improve the TiO xSiO 2 interface structure.

AB - TiO x thin-film transistors (TFTs) are fabricated using SiO 2 as gate dielectrics. The enhancement of the electric characteristics is observed after a postannealing processing including the reduction of the threshold voltage V th, the increase in mobility μ, and the on/off ratio. The effect of the postannealing temperature on both the TiO xSiO 2 interfacial bonding structure and the TiO x crystallinity is investigated. We suggest that the interfacial modification at the TiO xSiO 2 interface contributes to the significant reduction of V th due to the breaking of Si-O-Ti bonding. The improvement of the TiO x crystallinity and interfacial structure leads to the increase in μ and in the on/off ratio. The low-temperature annealing treatment at 200 °C is very effective to improve the TiO xSiO 2 interface structure.

KW - Annealing

KW - semiconductor-insulator interfaces

KW - thin-film transistors (TFTs)

KW - titanium oxide (TiO )

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U2 - 10.1109/LED.2012.2193658

DO - 10.1109/LED.2012.2193658

M3 - 文章

AN - SCOPUS:84862835193

SN - 0741-3106

VL - 33

SP - 1009

EP - 1011

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6199956

ER -

Effect of annealing temperature on TiO ₂-based thin-film-transistor performance

Abstract

Keywords

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