Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers

Biao Li; Jiqian Zhu; Xiaoping Zhang; Junhao Chu

doi:10.1016/S0022-0248(97)00226-1

Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers

Biao Li^*
, Jiqian Zhu
, Xiaoping Zhang
, Junhao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe crystals was investigated by means of various optical and structural techniques including infrared (IR) transmission, transmission electron microscopy (TEM), X-ray double crystal rocking curve, secondary ion mass spectroscopy (SIMS), Raman scattering (RS), and Rutherford backscattering spectroscopy (RBS). Results indicate that annealing can effectively reduce Te precipitates, especially larger ones, through thermomigration process, and purify the wafers by gettering some impurities. Additionally, annealing improves slightly the crystallinity of near-stoichiometric crystals but degrades the microstructure of non-stoichiometric wafers. The investigation implies that the annealed near-stoichiometric CdZnTe wafers are suitable as substrates for the growth of quality Hg_{1 - x}Cd_xTe epitaxial films.

Original language	English
Pages (from-to)	204-209
Number of pages	6
Journal	Journal of Crystal Growth
Volume	181
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(97)00226-1
State	Published - Nov 1997
Externally published	Yes

Keywords

Annealing
CdZnTe
Stoichiometry

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10.1016/S0022-0248(97)00226-1

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title = "Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers",

abstract = "The effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe crystals was investigated by means of various optical and structural techniques including infrared (IR) transmission, transmission electron microscopy (TEM), X-ray double crystal rocking curve, secondary ion mass spectroscopy (SIMS), Raman scattering (RS), and Rutherford backscattering spectroscopy (RBS). Results indicate that annealing can effectively reduce Te precipitates, especially larger ones, through thermomigration process, and purify the wafers by gettering some impurities. Additionally, annealing improves slightly the crystallinity of near-stoichiometric crystals but degrades the microstructure of non-stoichiometric wafers. The investigation implies that the annealed near-stoichiometric CdZnTe wafers are suitable as substrates for the growth of quality Hg1 - xCdxTe epitaxial films.",

keywords = "Annealing, CdZnTe, Stoichiometry",

author = "Biao Li and Jiqian Zhu and Xiaoping Zhang and Junhao Chu",

year = "1997",

month = nov,

doi = "10.1016/S0022-0248(97)00226-1",

language = "英语",

volume = "181",

pages = "204--209",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers

AU - Li, Biao

AU - Zhu, Jiqian

AU - Zhang, Xiaoping

AU - Chu, Junhao

PY - 1997/11

Y1 - 1997/11

N2 - The effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe crystals was investigated by means of various optical and structural techniques including infrared (IR) transmission, transmission electron microscopy (TEM), X-ray double crystal rocking curve, secondary ion mass spectroscopy (SIMS), Raman scattering (RS), and Rutherford backscattering spectroscopy (RBS). Results indicate that annealing can effectively reduce Te precipitates, especially larger ones, through thermomigration process, and purify the wafers by gettering some impurities. Additionally, annealing improves slightly the crystallinity of near-stoichiometric crystals but degrades the microstructure of non-stoichiometric wafers. The investigation implies that the annealed near-stoichiometric CdZnTe wafers are suitable as substrates for the growth of quality Hg1 - xCdxTe epitaxial films.

AB - The effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe crystals was investigated by means of various optical and structural techniques including infrared (IR) transmission, transmission electron microscopy (TEM), X-ray double crystal rocking curve, secondary ion mass spectroscopy (SIMS), Raman scattering (RS), and Rutherford backscattering spectroscopy (RBS). Results indicate that annealing can effectively reduce Te precipitates, especially larger ones, through thermomigration process, and purify the wafers by gettering some impurities. Additionally, annealing improves slightly the crystallinity of near-stoichiometric crystals but degrades the microstructure of non-stoichiometric wafers. The investigation implies that the annealed near-stoichiometric CdZnTe wafers are suitable as substrates for the growth of quality Hg1 - xCdxTe epitaxial films.

KW - Annealing

KW - CdZnTe

KW - Stoichiometry

UR - https://www.scopus.com/pages/publications/0031271931

U2 - 10.1016/S0022-0248(97)00226-1

DO - 10.1016/S0022-0248(97)00226-1

M3 - 文章

AN - SCOPUS:0031271931

SN - 0022-0248

VL - 181

SP - 204

EP - 209

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers

Abstract

Keywords

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