Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO 3 coated Si substrates

J. H. Ma; X. J. Meng; J. L. Sun; T. Lin; F. W. Shi; J. H. Chu

doi:10.1016/j.materresbull.2004.10.022

Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr_0.4Ti_0.6)O₃ thin films on LaNiO ₃ coated Si substrates

J. H. Ma, X. J. Meng, J. L. Sun, T. Lin, F. W. Shi, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Pb(Zr_0.4Ti_0.6)O₃ [PZT(40/60)] thin films were deposited onto LaNiO₃ (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O₂ and N₂, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O₂ were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N ₂ were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O₂ or too much N ₂ was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.

Original language	English
Pages (from-to)	221-228
Number of pages	8
Journal	Materials Research Bulletin
Volume	40
Issue number	2
DOIs	https://doi.org/10.1016/j.materresbull.2004.10.022
State	Published - 15 Feb 2005
Externally published	Yes

Keywords

A. Thin films
B. Chemical synthesis
D. Crystal structure
D. Ferroelectricity

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10.1016/j.materresbull.2004.10.022

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@article{223143ac61c7486199e03eb1473efeb1,

title = "Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO 3 coated Si substrates",

abstract = "Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films were deposited onto LaNiO3 (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O2 and N2, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O2 were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N 2 were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O2 or too much N 2 was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.",

keywords = "A. Thin films, B. Chemical synthesis, D. Crystal structure, D. Ferroelectricity",

author = "Ma, \{J. H.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and T. Lin and Shi, \{F. W.\} and Chu, \{J. H.\}",

year = "2005",

month = feb,

day = "15",

doi = "10.1016/j.materresbull.2004.10.022",

language = "英语",

volume = "40",

pages = "221--228",

journal = "Materials Research Bulletin",

issn = "0025-5408",

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TY - JOUR

T1 - Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO 3 coated Si substrates

AU - Ma, J. H.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Lin, T.

AU - Shi, F. W.

AU - Chu, J. H.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films were deposited onto LaNiO3 (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O2 and N2, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O2 were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N 2 were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O2 or too much N 2 was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.

AB - Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films were deposited onto LaNiO3 (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O2 and N2, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O2 were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N 2 were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O2 or too much N 2 was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.

KW - A. Thin films

KW - B. Chemical synthesis

KW - D. Crystal structure

KW - D. Ferroelectricity

UR - https://www.scopus.com/pages/publications/12344297691

U2 - 10.1016/j.materresbull.2004.10.022

DO - 10.1016/j.materresbull.2004.10.022

M3 - 文章

AN - SCOPUS:12344297691

SN - 0025-5408

VL - 40

SP - 221

EP - 228

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 2

ER -

Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr_0.4Ti_0.6)O₃ thin films on LaNiO ₃ coated Si substrates

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Keywords

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