@inproceedings{7520a0c4428a4d50a9ac17bf850cb0b8,
title = "Dynamics of Negative Capacitance induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit",
abstract = "The dynamics of negative capacitance (NC) in ferroelectric-resistor (FE-R) circuit is discussed on the basis of electrostatics and Kolmogorov-Avrami-Ishibashi model, followed by its experimental confirmation. Both formulation and experiment results suggest that slower charge compensation than ferroelectric switching is the key to obtain the NC effect. These results provide new insights into engineering the NC effects in FeFET.",
keywords = "Ferroelectric switching dynamics, Negative capacitance",
author = "Yulong Dong and Danyang Chen and Ni Zhong and Jingquan Liu and Chungang Duan and Xiuyan Li",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9421055",
language = "英语",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "美国",
}