Dynamic processes of charges generation in intermediate connectors for tandem organic light emitting diodes

Jin Peng Yang; Wen Qin Wang; Lin Tai Shang; Li Wen Cheng; Xiao Shuang Shen; Xiang Hua Zeng; Yan Qing Li; Jian Xin Tang

doi:10.1016/j.orgel.2017.04.014

Dynamic processes of charges generation in intermediate connectors for tandem organic light emitting diodes

Jin Peng Yang^*, Wen Qin Wang, Lin Tai Shang, Li Wen Cheng, Xiao Shuang Shen, Xiang Hua Zeng, Yan Qing Li, Jian Xin Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The role of transition metal oxides (TMOs) based intermediate connectors in tandem organic light emitting diodes (OLEDs) has been studied via capacitance-voltage and current-voltage characteristics, in order to elucidate the dynamic processes of charges generation and transport within externally applied voltages. The TMO-based intermediate connectors are composed of molybdenum trioxide (MoO₃) and cesium azide (CsN₃)-doped-4, 7–diphenyl-1, 10-phenanthroline (BPhen) layers, where MoO₃ and CsN₃ are used due to low deposition temperatures. From the obtained results of capacitance and current density, charges generation in CsN₃:BPhen/MoO₃/NPB is proposed to the defect states in thermally evaporated MoO₃, which offers a minimal energy offset for charges generation. Moreover, our results clearly indicate that charges generation efficiency is not only relying on the MoO₃-NPB interface, but also influenced by CsN₃:BPhen-MoO₃ interface. CsN₃ doped BPhen layer further improves charges separation efficiency, which finally results in favorable charges transport into the adjacent layers and ensure to function efficiently for tandem OLEDs.

Original language	English
Pages (from-to)	145-149
Number of pages	5
Journal	Organic Electronics
Volume	46
DOIs	https://doi.org/10.1016/j.orgel.2017.04.014
State	Published - 1 Jul 2017
Externally published	Yes

Keywords

Admittance spectroscopy
Capacitance-voltage
Intermediated connectors
Tandem organic light emitting diodes

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10.1016/j.orgel.2017.04.014

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@article{2f17bf5803664cba8489e497e7e4e652,

title = "Dynamic processes of charges generation in intermediate connectors for tandem organic light emitting diodes",

abstract = "The role of transition metal oxides (TMOs) based intermediate connectors in tandem organic light emitting diodes (OLEDs) has been studied via capacitance-voltage and current-voltage characteristics, in order to elucidate the dynamic processes of charges generation and transport within externally applied voltages. The TMO-based intermediate connectors are composed of molybdenum trioxide (MoO3) and cesium azide (CsN3)-doped-4, 7–diphenyl-1, 10-phenanthroline (BPhen) layers, where MoO3 and CsN3 are used due to low deposition temperatures. From the obtained results of capacitance and current density, charges generation in CsN3:BPhen/MoO3/NPB is proposed to the defect states in thermally evaporated MoO3, which offers a minimal energy offset for charges generation. Moreover, our results clearly indicate that charges generation efficiency is not only relying on the MoO3-NPB interface, but also influenced by CsN3:BPhen-MoO3 interface. CsN3 doped BPhen layer further improves charges separation efficiency, which finally results in favorable charges transport into the adjacent layers and ensure to function efficiently for tandem OLEDs.",

keywords = "Admittance spectroscopy, Capacitance-voltage, Intermediated connectors, Tandem organic light emitting diodes",

author = "Yang, \{Jin Peng\} and Wang, \{Wen Qin\} and Shang, \{Lin Tai\} and Cheng, \{Li Wen\} and Shen, \{Xiao Shuang\} and Zeng, \{Xiang Hua\} and Li, \{Yan Qing\} and Tang, \{Jian Xin\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = jul,

day = "1",

doi = "10.1016/j.orgel.2017.04.014",

language = "英语",

volume = "46",

pages = "145--149",

journal = "Organic Electronics",

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T1 - Dynamic processes of charges generation in intermediate connectors for tandem organic light emitting diodes

AU - Yang, Jin Peng

AU - Wang, Wen Qin

AU - Shang, Lin Tai

AU - Cheng, Li Wen

AU - Shen, Xiao Shuang

AU - Zeng, Xiang Hua

AU - Li, Yan Qing

AU - Tang, Jian Xin

PY - 2017/7/1

Y1 - 2017/7/1

N2 - The role of transition metal oxides (TMOs) based intermediate connectors in tandem organic light emitting diodes (OLEDs) has been studied via capacitance-voltage and current-voltage characteristics, in order to elucidate the dynamic processes of charges generation and transport within externally applied voltages. The TMO-based intermediate connectors are composed of molybdenum trioxide (MoO3) and cesium azide (CsN3)-doped-4, 7–diphenyl-1, 10-phenanthroline (BPhen) layers, where MoO3 and CsN3 are used due to low deposition temperatures. From the obtained results of capacitance and current density, charges generation in CsN3:BPhen/MoO3/NPB is proposed to the defect states in thermally evaporated MoO3, which offers a minimal energy offset for charges generation. Moreover, our results clearly indicate that charges generation efficiency is not only relying on the MoO3-NPB interface, but also influenced by CsN3:BPhen-MoO3 interface. CsN3 doped BPhen layer further improves charges separation efficiency, which finally results in favorable charges transport into the adjacent layers and ensure to function efficiently for tandem OLEDs.

AB - The role of transition metal oxides (TMOs) based intermediate connectors in tandem organic light emitting diodes (OLEDs) has been studied via capacitance-voltage and current-voltage characteristics, in order to elucidate the dynamic processes of charges generation and transport within externally applied voltages. The TMO-based intermediate connectors are composed of molybdenum trioxide (MoO3) and cesium azide (CsN3)-doped-4, 7–diphenyl-1, 10-phenanthroline (BPhen) layers, where MoO3 and CsN3 are used due to low deposition temperatures. From the obtained results of capacitance and current density, charges generation in CsN3:BPhen/MoO3/NPB is proposed to the defect states in thermally evaporated MoO3, which offers a minimal energy offset for charges generation. Moreover, our results clearly indicate that charges generation efficiency is not only relying on the MoO3-NPB interface, but also influenced by CsN3:BPhen-MoO3 interface. CsN3 doped BPhen layer further improves charges separation efficiency, which finally results in favorable charges transport into the adjacent layers and ensure to function efficiently for tandem OLEDs.

KW - Admittance spectroscopy

KW - Capacitance-voltage

KW - Intermediated connectors

KW - Tandem organic light emitting diodes

UR - https://www.scopus.com/pages/publications/85017607400

U2 - 10.1016/j.orgel.2017.04.014

DO - 10.1016/j.orgel.2017.04.014

M3 - 文章

AN - SCOPUS:85017607400

SN - 1566-1199

VL - 46

SP - 145

EP - 149

JO - Organic Electronics

JF - Organic Electronics

ER -

Dynamic processes of charges generation in intermediate connectors for tandem organic light emitting diodes

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Keywords

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