@inproceedings{d6dd68e8b84441079bc3e00ec5c1b1b7,
title = "Dual-band microwave power amplifier design using GaN transistors",
abstract = "This paper presents the design and the applications of dual-band microwave power amplifiers using GaN transistors. First, a dual-band power amplifier using dual-band transmission line (TL) impedance matching networks, which can simultaneously match two different complex impedances to 50 ω at two uncorrelated frequencies, is introduced. Secondly, design of a dual-band GaN based Doherty power amplifier (DPA) is presented in this paper. The dual-band DPA is based on a simplified DPA structure and wideband matching networks. The simplified DPA structure eliminates the 35 ω quarter wavelength impedance inverters used in the conventional DPAs by matching the output impedances of the carrier and peak amplifiers of the DPA to other values (e.g. 100 ω).",
keywords = "Doherty power amplifier, GaN, dual-band, microwave power amplifier",
author = "Jin Shao and David Poe and Han Ren and Bayaner Arigong and Mi Zhou and Jun Ding and Rongguo Zhou and Kim, \{Hyoung Soo\} and Hualiang Zhang",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE 57th International Midwest Symposium on Circuits and Systems, MWSCAS 2014 ; Conference date: 03-08-2014 Through 06-08-2014",
year = "2014",
month = sep,
day = "23",
doi = "10.1109/MWSCAS.2014.6908476",
language = "英语",
series = "Midwest Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "559--562",
booktitle = "2014 IEEE 57th International Midwest Symposium on Circuits and Systems, MWSCAS 2014",
address = "美国",
}