Dry etching of new phase-change material Al 1.3Sb 3Te in CF 4/Ar plasma

Xu Zhang; Feng Rao; Bo Liu; Cheng Peng; Xilin Zhou; Dongning Yao; Xiaohui Guo; Sannian Song; Liangyong Wang; Yan Cheng; Liangcai Wu; Zhitang Song; Songlin Feng

doi:10.1088/1674-4926/33/10/102003

Dry etching of new phase-change material Al _1.3Sb ₃Te in CF ₄/Ar plasma

Xu Zhang, Feng Rao, Bo Liu, Cheng Peng, Xilin Zhou, Dongning Yao, Xiaohui Guo, Sannian Song, Liangyong Wang, Yan Cheng, Liangcai Wu, Zhitang Song, Songlin Feng

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The dry etching characteristic of Al _1.3Sb ₃Te film was investigated by using a CF ₄/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF ₄/Ar ratio, the O ₂ addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al _1.3Sb ₃Te thin films was investigated as a function of the CF ₄/Ar ratio, the O ₂ addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF ₄ concentration of 4%, power of 300 W and pressure of 80 mTorr.

Original language	English
Article number	102003
Journal	Journal of Semiconductors
Volume	33
Issue number	10
DOIs	https://doi.org/10.1088/1674-4926/33/10/102003
State	Published - Oct 2012
Externally published	Yes

Keywords

Al Sb Te
CF /Ar gas mixture
dry etching
etch rate

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10.1088/1674-4926/33/10/102003

Cite this

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title = "Dry etching of new phase-change material Al 1.3Sb 3Te in CF 4/Ar plasma",

abstract = "The dry etching characteristic of Al 1.3Sb 3Te film was investigated by using a CF 4/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF 4/Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al 1.3Sb 3Te thin films was investigated as a function of the CF 4/Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF 4 concentration of 4\%, power of 300 W and pressure of 80 mTorr.",

keywords = "Al Sb Te, CF /Ar gas mixture, dry etching, etch rate",

author = "Xu Zhang and Feng Rao and Bo Liu and Cheng Peng and Xilin Zhou and Dongning Yao and Xiaohui Guo and Sannian Song and Liangyong Wang and Yan Cheng and Liangcai Wu and Zhitang Song and Songlin Feng",

year = "2012",

month = oct,

doi = "10.1088/1674-4926/33/10/102003",

language = "英语",

volume = "33",

journal = "Journal of Semiconductors",

issn = "1674-4926",

publisher = "IOS Press BV",

number = "10",

}

TY - JOUR

T1 - Dry etching of new phase-change material Al 1.3Sb 3Te in CF 4/Ar plasma

AU - Zhang, Xu

AU - Rao, Feng

AU - Liu, Bo

AU - Peng, Cheng

AU - Zhou, Xilin

AU - Yao, Dongning

AU - Guo, Xiaohui

AU - Song, Sannian

AU - Wang, Liangyong

AU - Cheng, Yan

AU - Wu, Liangcai

AU - Song, Zhitang

AU - Feng, Songlin

PY - 2012/10

Y1 - 2012/10

N2 - The dry etching characteristic of Al 1.3Sb 3Te film was investigated by using a CF 4/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF 4/Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al 1.3Sb 3Te thin films was investigated as a function of the CF 4/Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF 4 concentration of 4%, power of 300 W and pressure of 80 mTorr.

AB - The dry etching characteristic of Al 1.3Sb 3Te film was investigated by using a CF 4/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF 4/Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al 1.3Sb 3Te thin films was investigated as a function of the CF 4/Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF 4 concentration of 4%, power of 300 W and pressure of 80 mTorr.

KW - Al Sb Te

KW - CF /Ar gas mixture

KW - dry etching

KW - etch rate

UR - https://www.scopus.com/pages/publications/84867966319

U2 - 10.1088/1674-4926/33/10/102003

DO - 10.1088/1674-4926/33/10/102003

M3 - 文章

AN - SCOPUS:84867966319

SN - 1674-4926

VL - 33

JO - Journal of Semiconductors

JF - Journal of Semiconductors

IS - 10

M1 - 102003

ER -

Dry etching of new phase-change material Al _1.3Sb ₃Te in CF ₄/Ar plasma

Abstract

Keywords

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