Skip to main navigation Skip to search Skip to main content

Double-Layer Cross-Coupled Silicon Nitride Multi-Ring Resonator Systems

  • J. Pan
  • , S. Zhai
  • , J. Feng*
  • , M. Shi
  • , L. Zhou
  • , G. Cong
  • , R. Akimoto
  • , H. Zeng
  • *Corresponding author for this work
  • University of Shanghai for Science and Technology
  • Shanghai Jiao Tong University
  • National Institute of Advanced Industrial Science and Technology
  • East China Normal University

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate a double-layer Si3N4 multi-ring resonator system, where an S -bend waveguide is cross-coupled with a ring cavity loaded with two sub-ring resonators. The device performance is analyzed by using the transfer matrix method. The alignment-error-induced device performance variations are also discussed. The measured spectra coincide well with the simulated results. The device has high tuning flexibility and more design freedom with two sub-rings placed above the ring cavity. The spectrum profile can also be tuned by changing the cross-coupling coefficient. A heater placed above the resonator can shift the resonant wavelength effectively.

Original languageEnglish
Article number8964453
Pages (from-to)227-230
Number of pages4
JournalIEEE Photonics Technology Letters
Volume32
Issue number5
DOIs
StatePublished - 1 Mar 2020
Externally publishedYes

Keywords

  • Optical resonance
  • integrated optics
  • silicon nitride

Fingerprint

Dive into the research topics of 'Double-Layer Cross-Coupled Silicon Nitride Multi-Ring Resonator Systems'. Together they form a unique fingerprint.

Cite this