Doping effects of a nano-nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure

Z. C. Zhao; H. Wang; S. Q. Xiao; X. X. Zhong; Y. Z. Gu; Y. X. Xia; Q. Y. Jin; X. S. Wu

doi:10.1002/pssa.200521423

Doping effects of a nano-nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure

Z. C. Zhao
, H. Wang^*
, S. Q. Xiao
, X. X. Zhong
, Y. Z. Gu
, Y. X. Xia
, Q. Y. Jin
, X. S. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

NiO/Co/Cu/Co/Cu spin valves with a doped nano-nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/Cu, the MR is higher than that of the non-doped structure, while MR becomes relatively small when the NNL is doped at the bottom interface between NiO and Co. A detailed analysis is given. This study might be considered as useful for furthering understanding of how to tailor MR with NNLs.

Original language	English
Pages (from-to)	956-962
Number of pages	7
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	203
Issue number	5
DOIs	https://doi.org/10.1002/pssa.200521423
State	Published - Apr 2006
Externally published	Yes

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title = "Doping effects of a nano-nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure",

abstract = "NiO/Co/Cu/Co/Cu spin valves with a doped nano-nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/Cu, the MR is higher than that of the non-doped structure, while MR becomes relatively small when the NNL is doped at the bottom interface between NiO and Co. A detailed analysis is given. This study might be considered as useful for furthering understanding of how to tailor MR with NNLs.",

author = "Zhao, \{Z. C.\} and H. Wang and Xiao, \{S. Q.\} and Zhong, \{X. X.\} and Gu, \{Y. Z.\} and Xia, \{Y. X.\} and Jin, \{Q. Y.\} and Wu, \{X. S.\}",

year = "2006",

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language = "英语",

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TY - JOUR

T1 - Doping effects of a nano-nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure

AU - Zhao, Z. C.

AU - Wang, H.

AU - Xiao, S. Q.

AU - Zhong, X. X.

AU - Gu, Y. Z.

AU - Xia, Y. X.

AU - Jin, Q. Y.

AU - Wu, X. S.

PY - 2006/4

Y1 - 2006/4

N2 - NiO/Co/Cu/Co/Cu spin valves with a doped nano-nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/Cu, the MR is higher than that of the non-doped structure, while MR becomes relatively small when the NNL is doped at the bottom interface between NiO and Co. A detailed analysis is given. This study might be considered as useful for furthering understanding of how to tailor MR with NNLs.

AB - NiO/Co/Cu/Co/Cu spin valves with a doped nano-nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/Cu, the MR is higher than that of the non-doped structure, while MR becomes relatively small when the NNL is doped at the bottom interface between NiO and Co. A detailed analysis is given. This study might be considered as useful for furthering understanding of how to tailor MR with NNLs.

UR - https://www.scopus.com/pages/publications/33646448003

U2 - 10.1002/pssa.200521423

DO - 10.1002/pssa.200521423

M3 - 文章

AN - SCOPUS:33646448003

SN - 1862-6300

VL - 203

SP - 956

EP - 962

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 5

ER -

Doping effects of a nano-nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure

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