Domino-like magnetic phase transition induced by a bias voltage in a FeRh thin film

Huiliang Wu; Jianbo Wang; Chenbo Zhao; Qingfeng Zhan; Jiangtao Xue; Senfu Zhang; Jinwu Wei; Xiangqian Wang; Qingfang Liu

doi:10.1103/PhysRevB.111.214414

Domino-like magnetic phase transition induced by a bias voltage in a FeRh thin film

Huiliang Wu, Jianbo Wang, Chenbo Zhao, Qingfeng Zhan, Jiangtao Xue, Senfu Zhang, Jinwu Wei, Xiangqian Wang, Qingfang Liu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span of about tens of thousands Oersteds which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6×104 Oe to lower than 2×103 Oe at room temperature. Meanwhile, nonvolatile switchings with respect to the voltage pulses between pure magnetic phases of FeRh at room temperature can also be realized. The critical condition and phase diagram for domino-like MPTs are obtained in theory and our experiments support it well. Our works not only benefit the studies and applications of MPT-based devices but also are significant in the applications of the phase transition systems with resistance change.

Original language	English
Article number	214414
Journal	Physical Review B
Volume	111
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevB.111.214414
State	Published - 1 Jun 2025

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title = "Domino-like magnetic phase transition induced by a bias voltage in a FeRh thin film",

abstract = "The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span of about tens of thousands Oersteds which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6×104 Oe to lower than 2×103 Oe at room temperature. Meanwhile, nonvolatile switchings with respect to the voltage pulses between pure magnetic phases of FeRh at room temperature can also be realized. The critical condition and phase diagram for domino-like MPTs are obtained in theory and our experiments support it well. Our works not only benefit the studies and applications of MPT-based devices but also are significant in the applications of the phase transition systems with resistance change.",

author = "Huiliang Wu and Jianbo Wang and Chenbo Zhao and Qingfeng Zhan and Jiangtao Xue and Senfu Zhang and Jinwu Wei and Xiangqian Wang and Qingfang Liu",

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doi = "10.1103/PhysRevB.111.214414",

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T1 - Domino-like magnetic phase transition induced by a bias voltage in a FeRh thin film

AU - Wu, Huiliang

AU - Wang, Jianbo

AU - Zhao, Chenbo

AU - Zhan, Qingfeng

AU - Xue, Jiangtao

AU - Zhang, Senfu

AU - Wei, Jinwu

AU - Wang, Xiangqian

AU - Liu, Qingfang

PY - 2025/6/1

Y1 - 2025/6/1

N2 - The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span of about tens of thousands Oersteds which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6×104 Oe to lower than 2×103 Oe at room temperature. Meanwhile, nonvolatile switchings with respect to the voltage pulses between pure magnetic phases of FeRh at room temperature can also be realized. The critical condition and phase diagram for domino-like MPTs are obtained in theory and our experiments support it well. Our works not only benefit the studies and applications of MPT-based devices but also are significant in the applications of the phase transition systems with resistance change.

AB - The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span of about tens of thousands Oersteds which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6×104 Oe to lower than 2×103 Oe at room temperature. Meanwhile, nonvolatile switchings with respect to the voltage pulses between pure magnetic phases of FeRh at room temperature can also be realized. The critical condition and phase diagram for domino-like MPTs are obtained in theory and our experiments support it well. Our works not only benefit the studies and applications of MPT-based devices but also are significant in the applications of the phase transition systems with resistance change.

UR - https://www.scopus.com/pages/publications/105007508631

U2 - 10.1103/PhysRevB.111.214414

DO - 10.1103/PhysRevB.111.214414

M3 - 文章

AN - SCOPUS:105007508631

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VL - 111

JO - Physical Review B

JF - Physical Review B

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ER -

Domino-like magnetic phase transition induced by a bias voltage in a FeRh thin film

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