Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Jiahui Xu; Ao Zhang; Jianjun Gao

doi:10.1002/jnm.3140

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Jiahui Xu
, Ao Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Nantong University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter ((Formula presented.)) as a function of gate-to-source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S-parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70-nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.

Original language	English
Article number	e3140
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	37
Issue number	1
DOIs	https://doi.org/10.1002/jnm.3140
State	Published - 1 Jan 2024

Keywords

InP HEMT
I–V characteristics
S-parameters
nonlinear model
parameter extraction

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10.1002/jnm.3140

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title = "Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT",

abstract = "A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter ((Formula presented.)) as a function of gate-to-source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S-parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70-nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.",

keywords = "InP HEMT, I–V characteristics, S-parameters, nonlinear model, parameter extraction",

author = "Jiahui Xu and Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2023 John Wiley \& Sons Ltd.",

year = "2024",

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doi = "10.1002/jnm.3140",

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T1 - Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

AU - Xu, Jiahui

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2024/1/1

Y1 - 2024/1/1

N2 - A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter ((Formula presented.)) as a function of gate-to-source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S-parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70-nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.

AB - A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter ((Formula presented.)) as a function of gate-to-source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S-parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70-nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.

KW - InP HEMT

KW - I–V characteristics

KW - S-parameters

KW - nonlinear model

KW - parameter extraction

UR - https://www.scopus.com/pages/publications/85161431716

U2 - 10.1002/jnm.3140

DO - 10.1002/jnm.3140

M3 - 文章

AN - SCOPUS:85161431716

SN - 0894-3370

VL - 37

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 1

M1 - e3140

ER -

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

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Keywords

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