Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement

Jianjun Gao

doi:10.1016/j.sse.2011.05.011

Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement

Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Fudan University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs.

Original language	English
Pages (from-to)	42-48
Number of pages	7
Journal	Solid-State Electronics
Volume	63
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.05.011
State	Published - Sep 2011

Keywords

Equivalent circuits
MOSFET
Noise figure measurement
Noise model
Parameter extraction
Semiconductor device modeling
Small signal model

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10.1016/j.sse.2011.05.011

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title = "Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement",

abstract = "A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs.",

keywords = "Equivalent circuits, MOSFET, Noise figure measurement, Noise model, Parameter extraction, Semiconductor device modeling, Small signal model",

author = "Jianjun Gao",

year = "2011",

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doi = "10.1016/j.sse.2011.05.011",

language = "英语",

volume = "63",

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journal = "Solid-State Electronics",

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TY - JOUR

T1 - Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement

AU - Gao, Jianjun

PY - 2011/9

Y1 - 2011/9

N2 - A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs.

AB - A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs.

KW - Equivalent circuits

KW - MOSFET

KW - Noise figure measurement

KW - Noise model

KW - Parameter extraction

KW - Semiconductor device modeling

KW - Small signal model

UR - https://www.scopus.com/pages/publications/80051788620

U2 - 10.1016/j.sse.2011.05.011

DO - 10.1016/j.sse.2011.05.011

M3 - 文章

AN - SCOPUS:80051788620

SN - 0038-1101

VL - 63

SP - 42

EP - 48

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement

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