Abstract
A new method which directly extracts the model parameters for the high-speed low-threshold semiconductor laser is presented where only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used and it is not necessary to fit the intensity modulation frequency response or the relative noise intensity response avoiding the affect of optical feedback.
| Original language | English |
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| Pages | 569-571 |
| Number of pages | 3 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong Duration: 2 Dec 1997 → 5 Dec 1997 |
Conference
| Conference | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) |
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| City | Hong Kong, Hong Kong |
| Period | 2/12/97 → 5/12/97 |