Direct extraction of InP HBT noise parameters based on noise-figure measurement system

Jianjun Gao; Xiuping Li; Lin Jia; Hong Wang; Georg Boeck

doi:10.1109/TMTT.2004.839919

Direct extraction of InP HBT noise parameters based on noise-figure measurement system

Jianjun Gao^*
, Xiuping Li
, Lin Jia
, Hong Wang
, Georg Boeck

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6 × 20 μm² emitter over a wide range of bias points.

Original language	English
Pages (from-to)	330-334
Number of pages	5
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	53
Issue number	1
DOIs	https://doi.org/10.1109/TMTT.2004.839919
State	Published - Jan 2005
Externally published	Yes

Keywords

Heterojunction bipolar transistor (HBT)
Noise measurement
Noise model
Noise parameter

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10.1109/TMTT.2004.839919

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title = "Direct extraction of InP HBT noise parameters based on noise-figure measurement system",

abstract = "A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6 × 20 μm2 emitter over a wide range of bias points.",

keywords = "Heterojunction bipolar transistor (HBT), Noise measurement, Noise model, Noise parameter",

author = "Jianjun Gao and Xiuping Li and Lin Jia and Hong Wang and Georg Boeck",

year = "2005",

month = jan,

doi = "10.1109/TMTT.2004.839919",

language = "英语",

volume = "53",

pages = "330--334",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

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TY - JOUR

T1 - Direct extraction of InP HBT noise parameters based on noise-figure measurement system

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Jia, Lin

AU - Wang, Hong

AU - Boeck, Georg

PY - 2005/1

Y1 - 2005/1

N2 - A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6 × 20 μm2 emitter over a wide range of bias points.

AB - A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6 × 20 μm2 emitter over a wide range of bias points.

KW - Heterojunction bipolar transistor (HBT)

KW - Noise measurement

KW - Noise model

KW - Noise parameter

UR - https://www.scopus.com/pages/publications/12344332893

U2 - 10.1109/TMTT.2004.839919

DO - 10.1109/TMTT.2004.839919

M3 - 文章

AN - SCOPUS:12344332893

SN - 0018-9480

VL - 53

SP - 330

EP - 334

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 1

ER -

Direct extraction of InP HBT noise parameters based on noise-figure measurement system

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Keywords

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