Abstract
A parameter-extraction approach for the stacked on-chip transformer, which combines the analytical approach and the empirical optimization procedure, was developed. The model parameters determined from the analytical expressions were considered as an initial guess of a subsequent optimization procedure leading to the final model parameters. Good agreement was obtained between simulated and measured results for a stacked transformer on silicon substrate in the frequency range 100 MHz~60 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 172-176 |
| Number of pages | 5 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 35 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Apr 2016 |
Keywords
- Equivalent circuit
- Parameter-extraction approach
- Stacked transformer