TY - JOUR
T1 - Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5
AU - Zheng, Yonghui
AU - Wang, Yong
AU - Xin, Tianjiao
AU - Cheng, Yan
AU - Huang, Rong
AU - Liu, Pan
AU - Luo, Min
AU - Zhang, Zaoli
AU - Lv, Shilong
AU - Song, Zhitang
AU - Feng, Songlin
N1 - Publisher Copyright:
© 2019, The Author(s).
PY - 2019/12/1
Y1 - 2019/12/1
N2 - GeTe-Sb2Te3 pseudobinary system, especially Ge2Sb2Te5 alloy, is the most desirable material to be commercialized in phase change random access memory. Directly resolving the local atomic arrangement of Ge2Sb2Te5 during intermediate steps is an effective method to understand its transition mechanism from face-centered-cubic to hexagonal phases. In this study, we provide insights into the atomic arrangement variation during face-centered-cubic to hexagonal transition process in Ge2Sb2Te5 alloy by using advanced atomic resolution energy dispersive X-ray spectroscopy. Induced by thermal annealing, randomly distributed germanium and antimony atoms would migrate to the specific (111) layer in different behaviors, and antimony atoms migrate earlier than germanium atoms during the phase transition process, gradually forming intermediate structures similar to hexagonal lattice. With the migration completed, the obtained stable hexagonal structure has a partially ordered stacking sequence described as below: -Te-Sbx/Gey-Te-Gex/Sby-Te-Gex/Sby-Te-Sbx/Gey-Te- (x > y), which is directly related to the migration process. The current visual fragments suggest a gradual transition mechanism, and guide the performance optimization of Ge2Sb2Te5 alloy.
AB - GeTe-Sb2Te3 pseudobinary system, especially Ge2Sb2Te5 alloy, is the most desirable material to be commercialized in phase change random access memory. Directly resolving the local atomic arrangement of Ge2Sb2Te5 during intermediate steps is an effective method to understand its transition mechanism from face-centered-cubic to hexagonal phases. In this study, we provide insights into the atomic arrangement variation during face-centered-cubic to hexagonal transition process in Ge2Sb2Te5 alloy by using advanced atomic resolution energy dispersive X-ray spectroscopy. Induced by thermal annealing, randomly distributed germanium and antimony atoms would migrate to the specific (111) layer in different behaviors, and antimony atoms migrate earlier than germanium atoms during the phase transition process, gradually forming intermediate structures similar to hexagonal lattice. With the migration completed, the obtained stable hexagonal structure has a partially ordered stacking sequence described as below: -Te-Sbx/Gey-Te-Gex/Sby-Te-Gex/Sby-Te-Sbx/Gey-Te- (x > y), which is directly related to the migration process. The current visual fragments suggest a gradual transition mechanism, and guide the performance optimization of Ge2Sb2Te5 alloy.
UR - https://www.scopus.com/pages/publications/85066976568
U2 - 10.1038/s42004-019-0114-7
DO - 10.1038/s42004-019-0114-7
M3 - 文章
AN - SCOPUS:85066976568
SN - 2399-3669
VL - 2
JO - Communications Chemistry
JF - Communications Chemistry
IS - 1
M1 - 13
ER -