Diode-pumped Yb:GSO femtosecond laser

  • Wenxue Li*
  • , Qiang Hao
  • , Hui Zhai
  • , Heping Zeng
  • , Wei Lu
  • , Guangjun Zhao
  • , Lihe Zheng
  • , Liangbi Su
  • , Jun Xu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations

Abstract

Compact femtosecond laser operation of Yb:Gd2SiO5 (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb:GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1-100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW.

Original languageEnglish
Pages (from-to)2354-2359
Number of pages6
JournalOptics Express
Volume15
Issue number5
DOIs
StatePublished - 5 Mar 2007
Externally publishedYes

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