Dielectric relaxation and transition of porous silicon

L. K. Pan; H. T. Huang; Chang Q. Sun

doi:10.1063/1.1594821

Dielectric relaxation and transition of porous silicon

L. K. Pan^*
, H. T. Huang
, Chang Q. Sun

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.

Original language	English
Pages (from-to)	2695-2700
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.1594821
State	Published - 15 Aug 2003
Externally published	Yes

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title = "Dielectric relaxation and transition of porous silicon",

abstract = "A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.",

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AU - Sun, Chang Q.

PY - 2003/8/15

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N2 - A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.

AB - A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.

UR - https://www.scopus.com/pages/publications/0042924330

U2 - 10.1063/1.1594821

DO - 10.1063/1.1594821

M3 - 文章

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VL - 94

SP - 2695

EP - 2700

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Dielectric relaxation and transition of porous silicon

Abstract

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