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Dielectric permittivity and electric modulus in Bi2Ti 4O11

  • Jianjun Liu*
  • , Chun Gang Duan
  • , Wei Guo Yin
  • , W. N. Mei
  • , R. W. Smith
  • , J. R. Hardy
  • *Corresponding author for this work
  • University of Nebraska Omaha
  • University of Nebraska-Lincoln

Research output: Contribution to journalArticlepeer-review

Abstract

A study was performed on electric modulus and dielectric permittivity in Bi2Ti4O11. The frequency and temperature dependences of electric modulus and dielectric permittivity of pure and Ba-doped Bi2Ti4O11, in the ranges of 10 -1-106Hz and -150-350°C were studied. It was found that with Ba doping, the antiferroelectric phase transition temperature of Bi2Ti4O11 decreased.

Original languageEnglish
Pages (from-to)2812-2819
Number of pages8
JournalJournal of Chemical Physics
Volume119
Issue number5
DOIs
StatePublished - 1 Aug 2003
Externally publishedYes

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