Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates

Z. G. Hu; J. H. Ma; Z. M. Huang; Y. N. Wu; G. S. Wang; J. H. Chu

doi:10.1063/1.1619208

Dielectric functions of ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films on Si(100) substrates

Z. G. Hu^*
, J. H. Ma
, Z. M. Huang
, Y. N. Wu
, G. S. Wang
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.

Original language	English
Pages (from-to)	3686-3688
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	18
DOIs	https://doi.org/10.1063/1.1619208
State	Published - 3 Nov 2003
Externally published	Yes

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title = "Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates",

abstract = "The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.",

author = "Hu, \{Z. G.\} and Ma, \{J. H.\} and Huang, \{Z. M.\} and Wu, \{Y. N.\} and Wang, \{G. S.\} and Chu, \{J. H.\}",

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AU - Hu, Z. G.

AU - Ma, J. H.

AU - Huang, Z. M.

AU - Wu, Y. N.

AU - Wang, G. S.

AU - Chu, J. H.

PY - 2003/11/3

Y1 - 2003/11/3

N2 - The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.

AB - The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.

UR - https://www.scopus.com/pages/publications/0344928514

U2 - 10.1063/1.1619208

DO - 10.1063/1.1619208

M3 - 文章

AN - SCOPUS:0344928514

SN - 0003-6951

VL - 83

SP - 3686

EP - 3688

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Dielectric functions of ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films on Si(100) substrates

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