Dielectric and interface characteristics of SrTiO3 with a MIS structure

Jian Hua Ma; Jing Lan Sun; Xiang Jian Meng; Tie Lin; Fu Wen Shi; Jun Hao Chu

doi:10.7498/aps.54.1390

Dielectric and interface characteristics of SrTiO₃ with a MIS structure

Jian Hua Ma^*
, Jing Lan Sun
, Xiang Jian Meng
, Tie Lin
, Fu Wen Shi
, Jun Hao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

SrTiO₃(STO) films were deposited onto the p-type Si substrates by metal-organic decomposition (MOD) technique. The dielectric and interface characteristics of STO with a metal-insulator-semiconductor (MIS) structure were investigated. The results showed that the dielectric constant was about 105 and the dissipation factor was lower than 0.01 for our STO films at a frequency of 10 kHz. The excellent dielectric properties were attributed to the polycrystalline structure with good crystallinity. The fixed charge density N_f and the interface-trap density D_it were calculated to be about 1.5×10¹²cm^-2 and (1.4-3.5)×10¹²cm^-2 eV^-1, respectively. Both N_f and D_it were mainly connected with an interface layer with low dielectric constant formed at the interface of Si/STO.

Original language	English
Pages (from-to)	1390-1395
Number of pages	6
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	54
Issue number	3
DOIs	https://doi.org/10.7498/aps.54.1390
State	Published - Mar 2005
Externally published	Yes

Keywords

Dielectric characteristics
MIS structure
Si/STO interface
SrTiO films

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10.7498/aps.54.1390

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title = "Dielectric and interface characteristics of SrTiO3 with a MIS structure",

abstract = "SrTiO3(STO) films were deposited onto the p-type Si substrates by metal-organic decomposition (MOD) technique. The dielectric and interface characteristics of STO with a metal-insulator-semiconductor (MIS) structure were investigated. The results showed that the dielectric constant was about 105 and the dissipation factor was lower than 0.01 for our STO films at a frequency of 10 kHz. The excellent dielectric properties were attributed to the polycrystalline structure with good crystallinity. The fixed charge density Nf and the interface-trap density Dit were calculated to be about 1.5×1012cm-2 and (1.4-3.5)×1012cm-2 eV-1, respectively. Both Nf and Dit were mainly connected with an interface layer with low dielectric constant formed at the interface of Si/STO.",

keywords = "Dielectric characteristics, MIS structure, Si/STO interface, SrTiO films",

author = "Ma, \{Jian Hua\} and Sun, \{Jing Lan\} and Meng, \{Xiang Jian\} and Tie Lin and Shi, \{Fu Wen\} and Chu, \{Jun Hao\}",

year = "2005",

month = mar,

doi = "10.7498/aps.54.1390",

language = "英语",

volume = "54",

pages = "1390--1395",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "3",

}

TY - JOUR

T1 - Dielectric and interface characteristics of SrTiO3 with a MIS structure

AU - Ma, Jian Hua

AU - Sun, Jing Lan

AU - Meng, Xiang Jian

AU - Lin, Tie

AU - Shi, Fu Wen

AU - Chu, Jun Hao

PY - 2005/3

Y1 - 2005/3

N2 - SrTiO3(STO) films were deposited onto the p-type Si substrates by metal-organic decomposition (MOD) technique. The dielectric and interface characteristics of STO with a metal-insulator-semiconductor (MIS) structure were investigated. The results showed that the dielectric constant was about 105 and the dissipation factor was lower than 0.01 for our STO films at a frequency of 10 kHz. The excellent dielectric properties were attributed to the polycrystalline structure with good crystallinity. The fixed charge density Nf and the interface-trap density Dit were calculated to be about 1.5×1012cm-2 and (1.4-3.5)×1012cm-2 eV-1, respectively. Both Nf and Dit were mainly connected with an interface layer with low dielectric constant formed at the interface of Si/STO.

AB - SrTiO3(STO) films were deposited onto the p-type Si substrates by metal-organic decomposition (MOD) technique. The dielectric and interface characteristics of STO with a metal-insulator-semiconductor (MIS) structure were investigated. The results showed that the dielectric constant was about 105 and the dissipation factor was lower than 0.01 for our STO films at a frequency of 10 kHz. The excellent dielectric properties were attributed to the polycrystalline structure with good crystallinity. The fixed charge density Nf and the interface-trap density Dit were calculated to be about 1.5×1012cm-2 and (1.4-3.5)×1012cm-2 eV-1, respectively. Both Nf and Dit were mainly connected with an interface layer with low dielectric constant formed at the interface of Si/STO.

KW - Dielectric characteristics

KW - MIS structure

KW - Si/STO interface

KW - SrTiO films

UR - https://www.scopus.com/pages/publications/15944368079

U2 - 10.7498/aps.54.1390

DO - 10.7498/aps.54.1390

M3 - 文章

AN - SCOPUS:15944368079

SN - 1000-3290

VL - 54

SP - 1390

EP - 1395

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 3

ER -

Dielectric and interface characteristics of SrTiO₃ with a MIS structure

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Keywords

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