Abstract
Diamond films were deposited on ZnO:Al thin-film silica substrates by hot-filament chemical vapor deposition. Ultrasonic irradiation in a diamond suspension enhanced the diamond nucleation density on a ZnO:Al-silica substrate. The nucleation density and the growth rate of diamond film deposited on ZnO:Al thin film is higher than on the silica. The cracks on a ZnO:Al-silica substrate occurred during the diamond deposition process. It is proposed that the cracks were caused by the stress in ZnO:Al film and diamond film, and the peak frequency shift of the Raman line of diamond indicates the presence of compressive stress in the diamond film.
| Original language | English |
|---|---|
| Pages (from-to) | 4446-4447 |
| Number of pages | 2 |
| Journal | Journal of Applied Physics |
| Volume | 76 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1994 |