Device modeling of high electron mobility transistors: Small signal and noise modeling

Li Shen; Bo Chen; Ling Sun; Jianjun Gao

doi:10.1166/jctn.2015.4236

Device modeling of high electron mobility transistors: Small signal and noise modeling

Li Shen, Bo Chen, Ling Sun, Jianjun Gao

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The small signal equivalent circuit model and noise model for high electron mobility transistors (HEMT) are introduced in this paper. The corresponding model parameter extraction methods are also discussed. Three most common used measurement techniques including S-parameter, noise parameter and harmonic performance are described. The signal and noise de-embedding methods for microwave components and circuits in on wafer and coaxial measurement systems are discussed more detail.

Original language	English
Pages (from-to)	3547-3555
Number of pages	9
Journal	Journal of Computational and Theoretical Nanoscience
Volume	12
Issue number	10
DOIs	https://doi.org/10.1166/jctn.2015.4236
State	Published - Oct 2015

Keywords

Equivalent Circuits
HEMT
Noise Model
Parameter Extraction
Semiconductor Device Modeling
Small Signal Model

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10.1166/jctn.2015.4236

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title = "Device modeling of high electron mobility transistors: Small signal and noise modeling",

abstract = "The small signal equivalent circuit model and noise model for high electron mobility transistors (HEMT) are introduced in this paper. The corresponding model parameter extraction methods are also discussed. Three most common used measurement techniques including S-parameter, noise parameter and harmonic performance are described. The signal and noise de-embedding methods for microwave components and circuits in on wafer and coaxial measurement systems are discussed more detail.",

keywords = "Equivalent Circuits, HEMT, Noise Model, Parameter Extraction, Semiconductor Device Modeling, Small Signal Model",

author = "Li Shen and Bo Chen and Ling Sun and Jianjun Gao",

note = "Publisher Copyright: Copyright {\textcopyright} 2015 American Scientific Publishers.",

year = "2015",

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AU - Shen, Li

AU - Chen, Bo

AU - Sun, Ling

AU - Gao, Jianjun

PY - 2015/10

Y1 - 2015/10

N2 - The small signal equivalent circuit model and noise model for high electron mobility transistors (HEMT) are introduced in this paper. The corresponding model parameter extraction methods are also discussed. Three most common used measurement techniques including S-parameter, noise parameter and harmonic performance are described. The signal and noise de-embedding methods for microwave components and circuits in on wafer and coaxial measurement systems are discussed more detail.

AB - The small signal equivalent circuit model and noise model for high electron mobility transistors (HEMT) are introduced in this paper. The corresponding model parameter extraction methods are also discussed. Three most common used measurement techniques including S-parameter, noise parameter and harmonic performance are described. The signal and noise de-embedding methods for microwave components and circuits in on wafer and coaxial measurement systems are discussed more detail.

KW - Equivalent Circuits

KW - HEMT

KW - Noise Model

KW - Parameter Extraction

KW - Semiconductor Device Modeling

KW - Small Signal Model

UR - https://www.scopus.com/pages/publications/84960100351

U2 - 10.1166/jctn.2015.4236

DO - 10.1166/jctn.2015.4236

M3 - 文章

AN - SCOPUS:84960100351

SN - 1546-1955

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SP - 3547

EP - 3555

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

IS - 10

ER -

Device modeling of high electron mobility transistors: Small signal and noise modeling

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Keywords

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