TY - JOUR
T1 - Determination of the contributions of degenerate and non-degenerate two-photon absorption response in silicon avalanche photodiode for infrared photon detection
AU - Xu, Guangjian
AU - Ren, Xinyi
AU - Miao, Qucheng
AU - Yan, Ming
AU - Pan, Haifeng
AU - Chen, Xiuliang
AU - Wu, Guang
AU - Wu, E.
N1 - Publisher Copyright:
© 2020 Informa UK Limited, trading as Taylor & Francis Group.
PY - 2020
Y1 - 2020
N2 - The study of non-linear interactions in semiconductor photo-electronic devices to achieve effective and fast photon identification is an ongoing and important task. We investigated the specific contribution of degenerate and non-degenerate two-photon absorption (D-TPA and ND-TPA) response in silicon avalanche photodiode (Si-APD) for infrared photon detection at room temperature. We experimentally demonstrated that when the two laser pulses overlapped, the average D-TPA quantum detection efficiencies at 1800 nm, and that at 1550 nm were measured as 3.3 × 10−16 counts•pulse/photon2, 4.3 × 10−15 counts•pulse/photon2, respectively. And the ND-TPA quantum detection efficiency of 1800 nm and 1550 nm was measured to be 7.9 × 10−16 counts•pulse/photon2. This study provides a solution for the practical infrared photon detection devices based on TPA effect in Si-APDs.
AB - The study of non-linear interactions in semiconductor photo-electronic devices to achieve effective and fast photon identification is an ongoing and important task. We investigated the specific contribution of degenerate and non-degenerate two-photon absorption (D-TPA and ND-TPA) response in silicon avalanche photodiode (Si-APD) for infrared photon detection at room temperature. We experimentally demonstrated that when the two laser pulses overlapped, the average D-TPA quantum detection efficiencies at 1800 nm, and that at 1550 nm were measured as 3.3 × 10−16 counts•pulse/photon2, 4.3 × 10−15 counts•pulse/photon2, respectively. And the ND-TPA quantum detection efficiency of 1800 nm and 1550 nm was measured to be 7.9 × 10−16 counts•pulse/photon2. This study provides a solution for the practical infrared photon detection devices based on TPA effect in Si-APDs.
KW - Degenerate and non-degenerate two-photon absorption
KW - infrared photon detection
KW - silicon avalanche photodiode
UR - https://www.scopus.com/pages/publications/85096346911
U2 - 10.1080/09500340.2020.1842926
DO - 10.1080/09500340.2020.1842926
M3 - 文章
AN - SCOPUS:85096346911
SN - 0950-0340
VL - 67
SP - 1321
EP - 1326
JO - Journal of Modern Optics
JF - Journal of Modern Optics
IS - 16
ER -