Determination of source series resistances for InP HEMT under normal bias condition

Ao Zhang; Jianjun Gao

doi:10.1016/j.sse.2024.108975

Determination of source series resistances for InP HEMT under normal bias condition

Ao Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Nantong University

Research output: Contribution to journal › Article › peer-review

Abstract

A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.

Original language	English
Article number	108975
Journal	Solid-State Electronics
Volume	219
DOIs	https://doi.org/10.1016/j.sse.2024.108975
State	Published - Sep 2024

Keywords

HEMT
Parameter extraction
Source series resistance

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10.1016/j.sse.2024.108975

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@article{6ee8721ac8504a83a370ff21d2996e1d,

title = "Determination of source series resistances for InP HEMT under normal bias condition",

abstract = "A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.",

keywords = "HEMT, Parameter extraction, Source series resistance",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier Ltd",

year = "2024",

month = sep,

doi = "10.1016/j.sse.2024.108975",

language = "英语",

volume = "219",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Determination of source series resistances for InP HEMT under normal bias condition

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2024/9

Y1 - 2024/9

N2 - A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.

AB - A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.

KW - HEMT

KW - Parameter extraction

KW - Source series resistance

UR - https://www.scopus.com/pages/publications/85197340474

U2 - 10.1016/j.sse.2024.108975

DO - 10.1016/j.sse.2024.108975

M3 - 文章

AN - SCOPUS:85197340474

SN - 0038-1101

VL - 219

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108975

ER -

Determination of source series resistances for InP HEMT under normal bias condition

Abstract

Keywords

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