Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers

Q. Qiao; D. Xu; Y. W. Li; J. Z. Zhang; Z. G. Hu; J. H. Chu

doi:10.1016/j.tsf.2016.12.053

Detection of resistive switching behavior based on the Al₂O₃/ZnO/Al₂O₃ structure with alumina buffers

Q. Qiao, D. Xu, Y. W. Li^*, J. Z. Zhang, Z. G. Hu, J. H. Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The single ZnO layer and a sandwich Al₂O₃/ZnO/Al₂O₃ structure were prepared via atomic layer deposition, and the single ZnO layer showed a feature of ohmic conduction only. When we added that together with top and bottom alumina buffers, a non-polar resistive switching (RS) behavior was accomplished, allowing investigation of its electric endurance and retention characteristics. Analysis of the conduction mechanism at both high and low resistance states using auxiliary mathematic tools resulted in the proposed model of conducting filaments formed in the insulating Al₂O₃ buffers. The effect of stopping voltage V_end on the resistance window at high resistance state is studied and discussed.

Original language	English
Pages (from-to)	8-13
Number of pages	6
Journal	Thin Solid Films
Volume	623
DOIs	https://doi.org/10.1016/j.tsf.2016.12.053
State	Published - 1 Feb 2017

Keywords

Buffer layer
Non-polar resistive switching
Sandwich structure
Transition metal oxide

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10.1016/j.tsf.2016.12.053

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@article{9727bbe50e6f45208be7f6b79cf91856,

title = "Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers",

abstract = "The single ZnO layer and a sandwich Al2O3/ZnO/Al2O3 structure were prepared via atomic layer deposition, and the single ZnO layer showed a feature of ohmic conduction only. When we added that together with top and bottom alumina buffers, a non-polar resistive switching (RS) behavior was accomplished, allowing investigation of its electric endurance and retention characteristics. Analysis of the conduction mechanism at both high and low resistance states using auxiliary mathematic tools resulted in the proposed model of conducting filaments formed in the insulating Al2O3 buffers. The effect of stopping voltage Vend on the resistance window at high resistance state is studied and discussed.",

keywords = "Buffer layer, Non-polar resistive switching, Sandwich structure, Transition metal oxide",

author = "Q. Qiao and D. Xu and Li, \{Y. W.\} and Zhang, \{J. Z.\} and Hu, \{Z. G.\} and Chu, \{J. H.\}",

note = "Publisher Copyright: {\textcopyright} 2016",

year = "2017",

month = feb,

day = "1",

doi = "10.1016/j.tsf.2016.12.053",

language = "英语",

volume = "623",

pages = "8--13",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers

AU - Qiao, Q.

AU - Xu, D.

AU - Li, Y. W.

AU - Zhang, J. Z.

AU - Hu, Z. G.

AU - Chu, J. H.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - The single ZnO layer and a sandwich Al2O3/ZnO/Al2O3 structure were prepared via atomic layer deposition, and the single ZnO layer showed a feature of ohmic conduction only. When we added that together with top and bottom alumina buffers, a non-polar resistive switching (RS) behavior was accomplished, allowing investigation of its electric endurance and retention characteristics. Analysis of the conduction mechanism at both high and low resistance states using auxiliary mathematic tools resulted in the proposed model of conducting filaments formed in the insulating Al2O3 buffers. The effect of stopping voltage Vend on the resistance window at high resistance state is studied and discussed.

AB - The single ZnO layer and a sandwich Al2O3/ZnO/Al2O3 structure were prepared via atomic layer deposition, and the single ZnO layer showed a feature of ohmic conduction only. When we added that together with top and bottom alumina buffers, a non-polar resistive switching (RS) behavior was accomplished, allowing investigation of its electric endurance and retention characteristics. Analysis of the conduction mechanism at both high and low resistance states using auxiliary mathematic tools resulted in the proposed model of conducting filaments formed in the insulating Al2O3 buffers. The effect of stopping voltage Vend on the resistance window at high resistance state is studied and discussed.

KW - Buffer layer

KW - Non-polar resistive switching

KW - Sandwich structure

KW - Transition metal oxide

UR - https://www.scopus.com/pages/publications/85007507164

U2 - 10.1016/j.tsf.2016.12.053

DO - 10.1016/j.tsf.2016.12.053

M3 - 文章

AN - SCOPUS:85007507164

SN - 0040-6090

VL - 623

SP - 8

EP - 13

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Detection of resistive switching behavior based on the Al₂O₃/ZnO/Al₂O₃ structure with alumina buffers

Abstract

Keywords

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