Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

Xueke Wang; Yabin Sun; Ziyu Liu; Yun Liu; Xiaojin Li; Yanling Shi

doi:10.1007/s12633-022-01666-y

Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

Xueke Wang
, Yabin Sun^*
, Ziyu Liu^*
, Yun Liu
, Xiaojin Li
, Yanling Shi

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (I_ON) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased I_ON and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.

Original language	English
Pages (from-to)	9071-9082
Number of pages	12
Journal	Silicon
Volume	14
Issue number	14
DOIs	https://doi.org/10.1007/s12633-022-01666-y
State	Published - Sep 2022

Keywords

Band-to-band tunneling
electron-hole bilayer
line tunneling
nanotube
steep switching

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@article{1f25d005aeac48788791b90246be1f5f,

title = "Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer",

abstract = "In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (ION) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased ION and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.",

keywords = "Band-to-band tunneling, electron-hole bilayer, line tunneling, nanotube, steep switching",

author = "Xueke Wang and Yabin Sun and Ziyu Liu and Yun Liu and Xiaojin Li and Yanling Shi",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to Springer Nature B.V.",

year = "2022",

month = sep,

doi = "10.1007/s12633-022-01666-y",

language = "英语",

volume = "14",

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TY - JOUR

T1 - Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

AU - Wang, Xueke

AU - Sun, Yabin

AU - Liu, Ziyu

AU - Liu, Yun

AU - Li, Xiaojin

AU - Shi, Yanling

PY - 2022/9

Y1 - 2022/9

N2 - In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (ION) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased ION and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.

AB - In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (ION) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased ION and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.

KW - Band-to-band tunneling

KW - electron-hole bilayer

KW - line tunneling

KW - nanotube

KW - steep switching

UR - https://www.scopus.com/pages/publications/85123266482

U2 - 10.1007/s12633-022-01666-y

DO - 10.1007/s12633-022-01666-y

M3 - 文章

AN - SCOPUS:85123266482

SN - 1876-990X

VL - 14

SP - 9071

EP - 9082

JO - Silicon

JF - Silicon

IS - 14

ER -

Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

Abstract

Keywords

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