Design of Two Broadband Low Noise Amplifiers in 22 nm CMOS for Wi⁃Fi 6E/7 Applications

Two broadband low-noise amplifiers (LNAs) implemented in a 22 nm CMOS process were presented in this article to support the Wi-Fi 6E/7 requirement of extending frequency range up to 7.125 GHz. The first one, a tunable broadband LNA (LNA1), was developed with a tunable interstage network (TIN) to achieve broad bandwidth. A passive transformer was utilized for noise cancellation, while switched capacitors were employed for TIN implementation. The second one, an instantaneous broadband LNA (LNA2), was constructed using a dual-path input impedance matching network combined with weakly coupled gate-source inductors (WCGSI) to obtain a large bandwidth with flat gain, aiming to support carrier aggregation technology for achieving faster transmission rates. Measurement results of two LNAs show that LNA1 achieves a bandwidth of 2.1 GHz (5.3-7.4 GHz), a maximum gain of 26.5 dB, and a minimum noise figure of 1.83 dB, while consuming 43.05 mW of power. LNA2 exhibits a bandwidth of 2.9 GHz (4.8-7.7 GHz), a maximum gain of 18.82 dB, and a minimum noise figure of 1.72 dB, with a power consumption of 38.58 mW.