Abstract
In harsh radiation environments, nanoscale CMOS latches have become more and more vulnerable to triple-node upsets (TNUs). This paper first proposes a latch design that can self-recover from any possible TNU for aerospace applications in the 16-nm CMOS technology. The proposed latch is mainly constructed from seven mutually feeding-back soft-error-interceptive modules (SIMs), any of which consists of two three-input C-elements and one two-input C-element. Due to the mutual feedback mechanism of SIMs and the dual-level soft-error interception of each SIM, the latch can self-recover from any possible TNU. Simulation results demonstrate the TNU self-recoverability from any key TNU for the proposed latch using redundant silicon area. Furthermore, using a high-speed path, the proposed latch saves about 95.45% transmission delay and 86.97% delay-power-area product, compared with the state-of-the-art TNU-tolerant latch that cannot provide complete TNU self-recoverability at all.
| Original language | English |
|---|---|
| Article number | 8753738 |
| Pages (from-to) | 1163-1171 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Aerospace and Electronic Systems |
| Volume | 56 |
| Issue number | 2 |
| DOIs | |
| State | Published - Apr 2020 |
| Externally published | Yes |
Keywords
- Harsh radiation
- radiation-hardening-by-design
- self-recoverability
- soft error
- triple-node upset (TNU)