Design and realization of Si-based RF passive low-pass filter

  • Xiao Jin Li*
  • , Yan Ling Shi
  • , Shu Zhen You
  • , Zong Sheng Lai
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Because of lower power, lower area and lower noise, passive filter is better than active filter. But fabricating high factor is the necklace of the fabricating passive filter on chips. This paper provides the design methods of the microwave passive low-pass filter. A three-order low-pass filter has been designed using the design method which is studied. The transformation from the schematic-level to layout-level is completed using the software which is compiled by the author. C1, L1, C2 are 5.4346 pF, 13.252 nH and 5.4346 pF. The filter has a corner frequency of 900MHz whereas the attenuation is -3 dB. Simulation has been done in layout level using the software ADS. At last this paper simulates the filter using the Aglient software ADS. According to the simulation result the filter designed has been realized, the S-parameter shows that the sample has good working characteristics.

Original languageEnglish
Pages (from-to)88-91
Number of pages4
JournalDianzi Qijian/Journal of Electron Devices
Volume29
Issue number1
StatePublished - Mar 2006

Keywords

  • ADS
  • Microwave passive low-pass filter
  • Radio frequency
  • Structure parameter

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