TY - GEN
T1 - Design and Fabrication of Non-Volatile Direct Heating RF High-Speed Switch Matrix Based on GeTe Phase Change Material
AU - Li, Shubing
AU - Hou, Zhangchen
AU - Tang, Jianli
AU - Hu, Zhigao
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this work, a 2 × 2 non-volatile direct heating RF switch matrix based on GeTe phase change material was innovatively designed and fabricated based on multilayer lithography process. The pulsed laser deposition-derived phase change materials (PCM) of GeTe exhibited high crystalline quality with no impurities observed. The GeTe-based RF switch can achieve 'On' and 'Off' operations under 300 ns electrical pulse of 4.9 V and 7.1 V voltage, respectively. Based on the fast response of the PCM switch, the 2 × 2 matrix was designed and fabricated. The measured S-parameter of the matrix demonstrate that the insertion loss of the two RF phase-change switch units in the 'On' state are more than 0.63 dB, while the isolation of the two RF phase-change switch units in the 'Off' state are less than 20.3 dB over the range of DC-35 GHz. This work provides novel ideas for the design of high-speed RF switches and matrices, the proposed GeTe thin film phase change switch matrix offers an effective approach for advanced large frequency range, multi-channel high-speed switching.
AB - In this work, a 2 × 2 non-volatile direct heating RF switch matrix based on GeTe phase change material was innovatively designed and fabricated based on multilayer lithography process. The pulsed laser deposition-derived phase change materials (PCM) of GeTe exhibited high crystalline quality with no impurities observed. The GeTe-based RF switch can achieve 'On' and 'Off' operations under 300 ns electrical pulse of 4.9 V and 7.1 V voltage, respectively. Based on the fast response of the PCM switch, the 2 × 2 matrix was designed and fabricated. The measured S-parameter of the matrix demonstrate that the insertion loss of the two RF phase-change switch units in the 'On' state are more than 0.63 dB, while the isolation of the two RF phase-change switch units in the 'Off' state are less than 20.3 dB over the range of DC-35 GHz. This work provides novel ideas for the design of high-speed RF switches and matrices, the proposed GeTe thin film phase change switch matrix offers an effective approach for advanced large frequency range, multi-channel high-speed switching.
UR - https://www.scopus.com/pages/publications/85183670855
U2 - 10.1109/IMWS-AMP57814.2023.10381058
DO - 10.1109/IMWS-AMP57814.2023.10381058
M3 - 会议稿件
AN - SCOPUS:85183670855
T3 - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings
BT - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023
Y2 - 12 November 2023 through 15 November 2023
ER -