Demonstration of a silicon photomultiplier with bulk integrated quenching resistors on epitaxial silicon

  • G. Q. Zhang
  • , X. B. Hu
  • , C. Z. Hu
  • , D. P. Yin
  • , K. Liang
  • , R. Yang
  • , D. J. Han

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

In this paper we present the experimental results of a silicon photomultiplier (SiPM) with bulk integrated quenching resistors on epitaxial silicon. Compared with existing SiPM with polysilicon quenching resistors on the surface or with MRS structure, it has potential advantages of high photon detection efficiency (PDE) while retaining a large micro-cell density and the fabrication process is also simplified. The SiPM with the micro-cell density up to 104/mm2 and the PDE up to 25.6% is demonstrated. The characteristics of dark count rate, single photon detection capability, gain, optical crosstalk and PDE have been investigated and discussed.

Original languageEnglish
Pages (from-to)116-120
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume621
Issue number1-3
DOIs
StatePublished - 2010
Externally publishedYes

Keywords

  • Bulk quenching resistor
  • MPPC
  • SiPM
  • Silicon photomultipliers

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