TY - JOUR
T1 - Degradations of Multijunction Solar Cell Revealed by Absolute Electroluminescence Imaging
AU - Yang, Panpan
AU - Wang, Youyang
AU - Huang, Qiao
AU - Qin, Deyang
AU - Zhang, Jianing
AU - Zhou, Wenjie
AU - Weng, Guoen
AU - Hu, Xiaobo
AU - Chu, Junhao
AU - Akiyama, Hidefumi
AU - Chen, Shaoqiang
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2025
Y1 - 2025
N2 - Multijunction solar cells (MJSCs) experience material degradation and reduced efficiency during long-term storage. Current defect analysis methods for III-V compound MJSCs are limited by a lack of intuitive tools and in-depth understanding, hindering improvements in yield and efficiency. Absolute electroluminescence (EL) is a powerful technique for visualization and predicting solar cell performance. In this study, we applied absolute EL to quantify performance and degradation mechanisms in subcells after 26 months of storage. Absolute EL imaging identified both potential and inherent defect types within the subcells. The detailed analysis of localized defect points showed reduced photon emission near the defect points. Using the reciprocity theorem and carrier balance model, we found that degradation in the InGaP/GaAs/InGaAs solar cell resulted in a 0.8% reduction in efficiency, largely due to nonradiative recombination (NR) losses. Additionally, the efficiencies of top, middle, and bottom cells decreased by reduced by 0.3%, 0.2%, and 0.3%, respectively. This work demonstrates that the absolute EL imaging technique provides a comprehensive and detailed method for understanding defects and energy losses during long-term storage in MJSC.
AB - Multijunction solar cells (MJSCs) experience material degradation and reduced efficiency during long-term storage. Current defect analysis methods for III-V compound MJSCs are limited by a lack of intuitive tools and in-depth understanding, hindering improvements in yield and efficiency. Absolute electroluminescence (EL) is a powerful technique for visualization and predicting solar cell performance. In this study, we applied absolute EL to quantify performance and degradation mechanisms in subcells after 26 months of storage. Absolute EL imaging identified both potential and inherent defect types within the subcells. The detailed analysis of localized defect points showed reduced photon emission near the defect points. Using the reciprocity theorem and carrier balance model, we found that degradation in the InGaP/GaAs/InGaAs solar cell resulted in a 0.8% reduction in efficiency, largely due to nonradiative recombination (NR) losses. Additionally, the efficiencies of top, middle, and bottom cells decreased by reduced by 0.3%, 0.2%, and 0.3%, respectively. This work demonstrates that the absolute EL imaging technique provides a comprehensive and detailed method for understanding defects and energy losses during long-term storage in MJSC.
KW - Absolute electroluminescence (EL)
KW - GaAs
KW - degradation
KW - multijunction solar cells (MJSCs)
KW - nonradiative recombination (NR)
UR - https://www.scopus.com/pages/publications/105002335543
U2 - 10.1109/TED.2025.3546586
DO - 10.1109/TED.2025.3546586
M3 - 文章
AN - SCOPUS:105002335543
SN - 0018-9383
VL - 72
SP - 1857
EP - 1863
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
ER -