TY - JOUR
T1 - Degradation mechanism of Ni, Zn co-doping on Ag3PO4 photocatalysts for enhancing photocatalytic performance under simulated sunlight
AU - Zhang, Hongtao
AU - Lu, Rui
AU - Jiang, Ruihao
AU - Chen, An
AU - Liu, Weichi
AU - Li, Ruyan
AU - Shang, Tian
AU - Xu, Yang
AU - Jiang, Dongmei
AU - Zhan, Qingfeng
N1 - Publisher Copyright:
© 2025 Elsevier B.V.
PY - 2025/11/30
Y1 - 2025/11/30
N2 - In this work, Zn-doped and Ni, Zn co-doped Ag3PO4 photocatalysts were successfully prepared. Photocatalytic degradation experiments demonstrated that the catalytic performance could be improved with increasing Zn2+ content. However, the doping concentration of Zn in Ag3PO4 is inherently limited. Herein, Ni ions were introduced into the lattice to improve the solid solubility of Zn2+ ions, thereby further narrowing the band gap, as a result, the carrier separation rate got significantly improved. Meanwhile, density of state calculations showed that the impurity states of Zn and Ni were all located inside the valence band when introduced into the Ag3PO4 lattice alone; but the simultaneous introduction of both of them generates an impurity level of Ni within the bandgap, which could act as a shallow trap to capture photogenerated electrons, thereby facilitating the migration and separation of the carriers. The co-doping of Ni and Zn effectively modulated the electron and band structure of Ag3PO4, thereby promoting the generation of more active species and enhancing the photocatalytic performance of Ag3PO4. This work provides a new reference for improving the pollutants degradation capability of photocatalysts by doping metal ions in the semiconductor.
AB - In this work, Zn-doped and Ni, Zn co-doped Ag3PO4 photocatalysts were successfully prepared. Photocatalytic degradation experiments demonstrated that the catalytic performance could be improved with increasing Zn2+ content. However, the doping concentration of Zn in Ag3PO4 is inherently limited. Herein, Ni ions were introduced into the lattice to improve the solid solubility of Zn2+ ions, thereby further narrowing the band gap, as a result, the carrier separation rate got significantly improved. Meanwhile, density of state calculations showed that the impurity states of Zn and Ni were all located inside the valence band when introduced into the Ag3PO4 lattice alone; but the simultaneous introduction of both of them generates an impurity level of Ni within the bandgap, which could act as a shallow trap to capture photogenerated electrons, thereby facilitating the migration and separation of the carriers. The co-doping of Ni and Zn effectively modulated the electron and band structure of Ag3PO4, thereby promoting the generation of more active species and enhancing the photocatalytic performance of Ag3PO4. This work provides a new reference for improving the pollutants degradation capability of photocatalysts by doping metal ions in the semiconductor.
KW - Impurity level
KW - Ni, Zn co-doped AgPO
KW - Organic pollutants
KW - Photocatalytic degradation
KW - Solid solubility
UR - https://www.scopus.com/pages/publications/105009346821
U2 - 10.1016/j.apsusc.2025.163931
DO - 10.1016/j.apsusc.2025.163931
M3 - 文章
AN - SCOPUS:105009346821
SN - 0169-4332
VL - 710
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 163931
ER -