Degradation differences in the forward and reverse current gain of 25 MeV Si ion irradiated SiGe HBT

Yabin Sun; Jun Fu; Jun Xu; Yudong Wang; Wei Zhou; Wei Zhang; Jie Cui; Gaoqing Li; Zhihong Liu

doi:10.1016/j.physb.2014.05.033

Degradation differences in the forward and reverse current gain of 25 MeV Si ion irradiated SiGe HBT

Yabin Sun^*, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were exposed to 25 MeV Si ions with ion fluence from 9.1×10⁸ to 4.46×10¹⁰ ions/cm² at room temperature. The forward current gain (β_F) and reverse current gain (β_R) were studied before and after irradiation and the bias dependences of the displacement damage factor for β_F and β_R were also presented. Measurement results indicated that β_F and β_R all decline with the ion fluence increasing. The reciprocal of β_R was found to vary linearly throughout all ion fluence for arbitrary base-collector voltage. However, a non-linear behavior for the reciprocal of β_F appeared at low fluence for the low and medium base-emitter voltage. Besides, it was found that the bias dependence of displacement damage factor for β_F was significantly different from that for β_R. The underlying physical mechanisms were analyzed and investigated in detail.

Original language	English
Pages (from-to)	186-192
Number of pages	7
Journal	Physica B: Condensed Matter
Volume	449
DOIs	https://doi.org/10.1016/j.physb.2014.05.033
State	Published - 15 Sep 2014
Externally published	Yes

Keywords

Displacement damage factor
Gain degradation
Irradiation effects
SiGe HBT
Swift heavy ion

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10.1016/j.physb.2014.05.033

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@article{4495e130ce4643f9a1e7dcc9fac52bd7,

title = "Degradation differences in the forward and reverse current gain of 25 MeV Si ion irradiated SiGe HBT",

abstract = "The silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were exposed to 25 MeV Si ions with ion fluence from 9.1×108 to 4.46×1010 ions/cm2 at room temperature. The forward current gain (βF) and reverse current gain (βR) were studied before and after irradiation and the bias dependences of the displacement damage factor for βF and βR were also presented. Measurement results indicated that βF and βR all decline with the ion fluence increasing. The reciprocal of βR was found to vary linearly throughout all ion fluence for arbitrary base-collector voltage. However, a non-linear behavior for the reciprocal of βF appeared at low fluence for the low and medium base-emitter voltage. Besides, it was found that the bias dependence of displacement damage factor for βF was significantly different from that for βR. The underlying physical mechanisms were analyzed and investigated in detail.",

keywords = "Displacement damage factor, Gain degradation, Irradiation effects, SiGe HBT, Swift heavy ion",

author = "Yabin Sun and Jun Fu and Jun Xu and Yudong Wang and Wei Zhou and Wei Zhang and Jie Cui and Gaoqing Li and Zhihong Liu",

year = "2014",

month = sep,

day = "15",

doi = "10.1016/j.physb.2014.05.033",

language = "英语",

volume = "449",

pages = "186--192",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Degradation differences in the forward and reverse current gain of 25 MeV Si ion irradiated SiGe HBT

AU - Sun, Yabin

AU - Fu, Jun

AU - Xu, Jun

AU - Wang, Yudong

AU - Zhou, Wei

AU - Zhang, Wei

AU - Cui, Jie

AU - Li, Gaoqing

AU - Liu, Zhihong

PY - 2014/9/15

Y1 - 2014/9/15

N2 - The silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were exposed to 25 MeV Si ions with ion fluence from 9.1×108 to 4.46×1010 ions/cm2 at room temperature. The forward current gain (βF) and reverse current gain (βR) were studied before and after irradiation and the bias dependences of the displacement damage factor for βF and βR were also presented. Measurement results indicated that βF and βR all decline with the ion fluence increasing. The reciprocal of βR was found to vary linearly throughout all ion fluence for arbitrary base-collector voltage. However, a non-linear behavior for the reciprocal of βF appeared at low fluence for the low and medium base-emitter voltage. Besides, it was found that the bias dependence of displacement damage factor for βF was significantly different from that for βR. The underlying physical mechanisms were analyzed and investigated in detail.

AB - The silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were exposed to 25 MeV Si ions with ion fluence from 9.1×108 to 4.46×1010 ions/cm2 at room temperature. The forward current gain (βF) and reverse current gain (βR) were studied before and after irradiation and the bias dependences of the displacement damage factor for βF and βR were also presented. Measurement results indicated that βF and βR all decline with the ion fluence increasing. The reciprocal of βR was found to vary linearly throughout all ion fluence for arbitrary base-collector voltage. However, a non-linear behavior for the reciprocal of βF appeared at low fluence for the low and medium base-emitter voltage. Besides, it was found that the bias dependence of displacement damage factor for βF was significantly different from that for βR. The underlying physical mechanisms were analyzed and investigated in detail.

KW - Displacement damage factor

KW - Gain degradation

KW - Irradiation effects

KW - SiGe HBT

KW - Swift heavy ion

UR - https://www.scopus.com/pages/publications/84902164041

U2 - 10.1016/j.physb.2014.05.033

DO - 10.1016/j.physb.2014.05.033

M3 - 文章

AN - SCOPUS:84902164041

SN - 0921-4526

VL - 449

SP - 186

EP - 192

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Degradation differences in the forward and reverse current gain of 25 MeV Si ion irradiated SiGe HBT

Abstract

Keywords

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