Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

Fangyu Yue; Jun Wu; Junhao Chu

doi:10.1063/1.2983655

Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

Fangyu Yue^*
, Jun Wu
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped _Hg1-x _Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including _VHg, _AsHg, _VHg - _AsHg complex, and _TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.

Original language	English
Article number	131909
Journal	Applied Physics Letters
Volume	93
Issue number	13
DOIs	https://doi.org/10.1063/1.2983655
State	Published - 2008

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title = "Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra",

abstract = "The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg - AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.",

author = "Fangyu Yue and Jun Wu and Junhao Chu",

year = "2008",

doi = "10.1063/1.2983655",

language = "英语",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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T1 - Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

AU - Yue, Fangyu

AU - Wu, Jun

AU - Chu, Junhao

PY - 2008

Y1 - 2008

N2 - The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg - AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.

AB - The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg - AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.

UR - https://www.scopus.com/pages/publications/53349160747

U2 - 10.1063/1.2983655

DO - 10.1063/1.2983655

M3 - 文章

AN - SCOPUS:53349160747

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131909

ER -

Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

Abstract

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