DC and RF Small Signal Modeling of 28nm Planar MOSFET

Siyu Chen; Yabin Sun; Xiaojin Li; Yanling Shi

doi:10.1109/ICICM59499.2023.10365754

DC and RF Small Signal Modeling of 28nm Planar MOSFET

Siyu Chen^*
, Yabin Sun^*
, Xiaojin Li
, Yanling Shi

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, DC model and RF small signal model of 28nm planar MOSFET are proposed respectively. First, using the industry standard model, the Berkeley Short-Channel IGFET Model (BSIM), a DC global model of the MOSFET is established. An RF small-signal model up to 100 GHz is also obtained accurately. A nonlinear rational function is fitted to obtain the parameters. Due to the physical limitations of the mathematical model, the RF small-signal model is fitted with the RF quality factor. The analysis of the parasitic parameter variations at different voltages is performed. Good agreement is obtained between the equivalent circuit-modeled and TCAD-simulated data, which verifies the reliability of the model.

Original language	English
Title of host publication	2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	603-606
Number of pages	4
ISBN (Electronic)	9798350318517
DOIs	https://doi.org/10.1109/ICICM59499.2023.10365754
State	Published - 2023
Event	8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 - Nanjing, China Duration: 20 Oct 2023 → 23 Oct 2023

Publication series

Name	2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

Conference

Conference	8th International Conference on Integrated Circuits and Microsystems, ICICM 2023
Country/Territory	China
City	Nanjing
Period	20/10/23 → 23/10/23

Keywords

28nm planar MOSFET
global model
parameter extraction
small-signal model

Access to Document

10.1109/ICICM59499.2023.10365754

Cite this

Chen, S., Sun, Y., Li, X., & Shi, Y. (2023). DC and RF Small Signal Modeling of 28nm Planar MOSFET. In 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 (pp. 603-606). (2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICM59499.2023.10365754

@inproceedings{23d0e8cab8994a6ea310d0cc6ee49571,

title = "DC and RF Small Signal Modeling of 28nm Planar MOSFET",

abstract = "In this paper, DC model and RF small signal model of 28nm planar MOSFET are proposed respectively. First, using the industry standard model, the Berkeley Short-Channel IGFET Model (BSIM), a DC global model of the MOSFET is established. An RF small-signal model up to 100 GHz is also obtained accurately. A nonlinear rational function is fitted to obtain the parameters. Due to the physical limitations of the mathematical model, the RF small-signal model is fitted with the RF quality factor. The analysis of the parasitic parameter variations at different voltages is performed. Good agreement is obtained between the equivalent circuit-modeled and TCAD-simulated data, which verifies the reliability of the model.",

keywords = "28nm planar MOSFET, global model, parameter extraction, small-signal model",

author = "Siyu Chen and Yabin Sun and Xiaojin Li and Yanling Shi",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 ; Conference date: 20-10-2023 Through 23-10-2023",

year = "2023",

doi = "10.1109/ICICM59499.2023.10365754",

language = "英语",

series = "2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "603--606",

booktitle = "2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023",

address = "美国",

}

Chen, S, Sun, Y , Li, X & Shi, Y 2023, DC and RF Small Signal Modeling of 28nm Planar MOSFET. in 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023. 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023, Institute of Electrical and Electronics Engineers Inc., pp. 603-606, 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023, Nanjing, China, 20/10/23. https://doi.org/10.1109/ICICM59499.2023.10365754

DC and RF Small Signal Modeling of 28nm Planar MOSFET. / Chen, Siyu; Sun, Yabin ; Li, Xiaojin et al.
2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 603-606 (2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - DC and RF Small Signal Modeling of 28nm Planar MOSFET

AU - Chen, Siyu

AU - Sun, Yabin

AU - Li, Xiaojin

AU - Shi, Yanling

PY - 2023

Y1 - 2023

N2 - In this paper, DC model and RF small signal model of 28nm planar MOSFET are proposed respectively. First, using the industry standard model, the Berkeley Short-Channel IGFET Model (BSIM), a DC global model of the MOSFET is established. An RF small-signal model up to 100 GHz is also obtained accurately. A nonlinear rational function is fitted to obtain the parameters. Due to the physical limitations of the mathematical model, the RF small-signal model is fitted with the RF quality factor. The analysis of the parasitic parameter variations at different voltages is performed. Good agreement is obtained between the equivalent circuit-modeled and TCAD-simulated data, which verifies the reliability of the model.

AB - In this paper, DC model and RF small signal model of 28nm planar MOSFET are proposed respectively. First, using the industry standard model, the Berkeley Short-Channel IGFET Model (BSIM), a DC global model of the MOSFET is established. An RF small-signal model up to 100 GHz is also obtained accurately. A nonlinear rational function is fitted to obtain the parameters. Due to the physical limitations of the mathematical model, the RF small-signal model is fitted with the RF quality factor. The analysis of the parasitic parameter variations at different voltages is performed. Good agreement is obtained between the equivalent circuit-modeled and TCAD-simulated data, which verifies the reliability of the model.

KW - 28nm planar MOSFET

KW - global model

KW - parameter extraction

KW - small-signal model

UR - https://www.scopus.com/pages/publications/85182746840

U2 - 10.1109/ICICM59499.2023.10365754

DO - 10.1109/ICICM59499.2023.10365754

M3 - 会议稿件

AN - SCOPUS:85182746840

T3 - 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

SP - 603

EP - 606

BT - 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

Y2 - 20 October 2023 through 23 October 2023

ER -

Chen S, Sun Y , Li X, Shi Y. DC and RF Small Signal Modeling of 28nm Planar MOSFET. In 2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 603-606. (2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023). doi: 10.1109/ICICM59499.2023.10365754

DC and RF Small Signal Modeling of 28nm Planar MOSFET

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