DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

Zi Xin Chen; Wei Jing Liu; Jiang Nan Liu; Qiu Hui Wang; Xu Guo Zhang; Jie Xu; Qing Hua Li; Wei Bai; Xiao Dong Tang

doi:10.1088/1674-1056/ac43a6

DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

Zi Xin Chen, Wei Jing Liu^*, Jiang Nan Liu, Qiu Hui Wang, Xu Guo Zhang, Jie Xu, Qing Hua Li, Wei Bai, Xiao Dong Tang

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (Ion), on/off current ratio (Ion/Ioff), subthreshold swing (SS) transconductance (gm), cut-off frequency ( fT) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high Ion (9.98×10^-4A/μm), high Ion/Ioff (∼10¹¹), as well as low SS (∼ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.

Original language	English
Article number	058501
Journal	Chinese Physics B
Volume	31
Issue number	5
DOIs	https://doi.org/10.1088/1674-1056/ac43a6
State	Published - Apr 2022

Keywords

double gate
pocket
tunnel field effect transistor

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10.1088/1674-1056/ac43a6

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@article{d3096bac0d3747449434e667e7c66419,

title = "DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate",

abstract = "A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (Ion), on/off current ratio (Ion/Ioff), subthreshold swing (SS) transconductance (gm), cut-off frequency ( fT) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high Ion (9.98×10-4A/μm), high Ion/Ioff (∼1011), as well as low SS (∼ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.",

keywords = "double gate, pocket, tunnel field effect transistor",

author = "Chen, \{Zi Xin\} and Liu, \{Wei Jing\} and Liu, \{Jiang Nan\} and Wang, \{Qiu Hui\} and Zhang, \{Xu Guo\} and Jie Xu and Li, \{Qing Hua\} and Wei Bai and Tang, \{Xiao Dong\}",

year = "2022",

month = apr,

doi = "10.1088/1674-1056/ac43a6",

language = "英语",

volume = "31",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "IOP Publishing Ltd.",

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TY - JOUR

T1 - DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

AU - Chen, Zi Xin

AU - Liu, Wei Jing

AU - Liu, Jiang Nan

AU - Wang, Qiu Hui

AU - Zhang, Xu Guo

AU - Xu, Jie

AU - Li, Qing Hua

AU - Bai, Wei

AU - Tang, Xiao Dong

PY - 2022/4

Y1 - 2022/4

N2 - A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (Ion), on/off current ratio (Ion/Ioff), subthreshold swing (SS) transconductance (gm), cut-off frequency ( fT) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high Ion (9.98×10-4A/μm), high Ion/Ioff (∼1011), as well as low SS (∼ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.

AB - A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (Ion), on/off current ratio (Ion/Ioff), subthreshold swing (SS) transconductance (gm), cut-off frequency ( fT) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high Ion (9.98×10-4A/μm), high Ion/Ioff (∼1011), as well as low SS (∼ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.

KW - double gate

KW - pocket

KW - tunnel field effect transistor

UR - https://www.scopus.com/pages/publications/85130009408

U2 - 10.1088/1674-1056/ac43a6

DO - 10.1088/1674-1056/ac43a6

M3 - 文章

AN - SCOPUS:85130009408

SN - 1674-1056

VL - 31

JO - Chinese Physics B

JF - Chinese Physics B

IS - 5

M1 - 058501

ER -

DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

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Keywords

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