Damage buildup and annealing characteristics in Be-implanted InAs 0.93Sb 0.07 film

Q. W. Wang; C. H. Sun; S. H. Hu; L. M. Wei; J. Wu; Y. Sun; G. J. Hu; G. Yu; X. Chen; H. Y. Deng; N. Dai

doi:10.1016/j.nimb.2012.05.003

Damage buildup and annealing characteristics in Be-implanted InAs _0.93Sb _0.07 film

Q. W. Wang, C. H. Sun, S. H. Hu, L. M. Wei, J. Wu, Y. Sun, G. J. Hu, G. Yu, X. Chen, H. Y. Deng^*, N. Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Damage buildup in 80 keV Be-implanted InAs _0.93Sb _0.07 epitaxial layer grown by liquid epitaxy growth (LPE) with the implantation fluences ranging from 1 × 10 ¹³ to 4 × 10 ¹⁵ cm ^-2 have been detailedly investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The implantation-induced nonlinear maximum perpendicular strain _m as a function of the Be fluence was deduced. Microstructural variation created by damage buildup was analyzed. The characteristics of annealing on the lattice damage were also studied. The created damages can be recovered by rapid thermal annealing at 500 °C for samples with the fluence below 1.0 × 10 ¹⁵ cm ^-2, but nano-sized residual damages still existed when the fluence reaches 4.0 × 10 ¹⁵ cm ^-2 due to the poor recrystallization of the small disorder region.

Original language	English
Pages (from-to)	11-17
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	285
DOIs	https://doi.org/10.1016/j.nimb.2012.05.003
State	Published - 15 Aug 2012
Externally published	Yes

Keywords

HRXRD
III-V Semiconductors
Ion-implantation
Microstructure

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10.1016/j.nimb.2012.05.003

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Wang, Q. W., Sun, C. H., Hu, S. H., Wei, L. M., Wu, J., Sun, Y., Hu, G. J., Yu, G., Chen, X., Deng, H. Y., & Dai, N. (2012). Damage buildup and annealing characteristics in Be-implanted InAs _0.93Sb _0.07 film. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 285, 11-17. https://doi.org/10.1016/j.nimb.2012.05.003

@article{156e86aef95242328bd9763c8f3e018a,

title = "Damage buildup and annealing characteristics in Be-implanted InAs 0.93Sb 0.07 film",

abstract = "Damage buildup in 80 keV Be-implanted InAs 0.93Sb 0.07 epitaxial layer grown by liquid epitaxy growth (LPE) with the implantation fluences ranging from 1 × 10 13 to 4 × 10 15 cm -2 have been detailedly investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The implantation-induced nonlinear maximum perpendicular strain m as a function of the Be fluence was deduced. Microstructural variation created by damage buildup was analyzed. The characteristics of annealing on the lattice damage were also studied. The created damages can be recovered by rapid thermal annealing at 500 °C for samples with the fluence below 1.0 × 10 15 cm -2, but nano-sized residual damages still existed when the fluence reaches 4.0 × 10 15 cm -2 due to the poor recrystallization of the small disorder region.",

keywords = "HRXRD, III-V Semiconductors, Ion-implantation, Microstructure",

author = "Wang, \{Q. W.\} and Sun, \{C. H.\} and Hu, \{S. H.\} and Wei, \{L. M.\} and J. Wu and Y. Sun and Hu, \{G. J.\} and G. Yu and X. Chen and Deng, \{H. Y.\} and N. Dai",

year = "2012",

month = aug,

day = "15",

doi = "10.1016/j.nimb.2012.05.003",

language = "英语",

volume = "285",

pages = "11--17",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Damage buildup and annealing characteristics in Be-implanted InAs 0.93Sb 0.07 film

AU - Wang, Q. W.

AU - Sun, C. H.

AU - Hu, S. H.

AU - Wei, L. M.

AU - Wu, J.

AU - Sun, Y.

AU - Hu, G. J.

AU - Yu, G.

AU - Chen, X.

AU - Deng, H. Y.

AU - Dai, N.

PY - 2012/8/15

Y1 - 2012/8/15

N2 - Damage buildup in 80 keV Be-implanted InAs 0.93Sb 0.07 epitaxial layer grown by liquid epitaxy growth (LPE) with the implantation fluences ranging from 1 × 10 13 to 4 × 10 15 cm -2 have been detailedly investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The implantation-induced nonlinear maximum perpendicular strain m as a function of the Be fluence was deduced. Microstructural variation created by damage buildup was analyzed. The characteristics of annealing on the lattice damage were also studied. The created damages can be recovered by rapid thermal annealing at 500 °C for samples with the fluence below 1.0 × 10 15 cm -2, but nano-sized residual damages still existed when the fluence reaches 4.0 × 10 15 cm -2 due to the poor recrystallization of the small disorder region.

AB - Damage buildup in 80 keV Be-implanted InAs 0.93Sb 0.07 epitaxial layer grown by liquid epitaxy growth (LPE) with the implantation fluences ranging from 1 × 10 13 to 4 × 10 15 cm -2 have been detailedly investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The implantation-induced nonlinear maximum perpendicular strain m as a function of the Be fluence was deduced. Microstructural variation created by damage buildup was analyzed. The characteristics of annealing on the lattice damage were also studied. The created damages can be recovered by rapid thermal annealing at 500 °C for samples with the fluence below 1.0 × 10 15 cm -2, but nano-sized residual damages still existed when the fluence reaches 4.0 × 10 15 cm -2 due to the poor recrystallization of the small disorder region.

KW - HRXRD

KW - III-V Semiconductors

KW - Ion-implantation

KW - Microstructure

UR - https://www.scopus.com/pages/publications/84863653776

U2 - 10.1016/j.nimb.2012.05.003

DO - 10.1016/j.nimb.2012.05.003

M3 - 文章

AN - SCOPUS:84863653776

SN - 0168-583X

VL - 285

SP - 11

EP - 17

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Damage buildup and annealing characteristics in Be-implanted InAs _0.93Sb _0.07 film

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Keywords

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