Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells

Ye Shen*, Huai Zhong Xing, Jian Guo Yu, Bin Lu, Hui Bing Mao, Ji Qing Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Transfer matrix method has been used to analyze Curie-temperature (Tc) modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Schrödinger equation is employed to calculate the quantum-confined subband energies and the distribution of their corresponding envelope functions. Based on these, we investigate the dependence of Tc on the built-in electric fields in different structures of quantum well. By changing the asymmetry of double quantum wells (DQW), Tc can be raised up to 3 times.

Original languageEnglish
Pages (from-to)3453-3457
Number of pages5
JournalWuli Xuebao/Acta Physica Sinica
Volume56
Issue number6
DOIs
StatePublished - Jun 2007

Keywords

  • Built-in electric fields
  • Curie-temperature
  • GaN
  • Quantum well

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