Abstract
In based mixture Inx(OH,S)y buffer layers deposited by chemical bath deposition technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. We report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber and CdS or ZnS buffer by addition of a thin In based mixture layer. It is shown that the presence of thin Inx(OH,S)y at the CIGS absorber/CdS or ZnS buffer interfaces greatly improve the solar cell performances. The performances of CIGS cells using dual buffer layers composed of Inx(OH,S)y/CdS or Inx(OH,S)y/ZnS increased by 22.4% and 51.6%, as compared to the single and standard CdS or ZnS buffered cells, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 333-337 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 520 |
| Issue number | 1 |
| DOIs | |
| State | Published - 31 Oct 2011 |
Keywords
- Buffer layer
- Chemical bath deposition
- Cu(In,Ga)Se
- Selenization
- Thin film solar cells