Cu(In,Ga)Se2 solar cells with double layered buffers grown by chemical bath deposition

  • Z. Q. Li
  • , J. H. Shi
  • , D. W. Zhang
  • , Q. Q. Liu
  • , Z. Sun
  • , Y. W. Chen
  • , Z. Yang
  • , S. M. Huang*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In based mixture Inx(OH,S)y buffer layers deposited by chemical bath deposition technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. We report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber and CdS or ZnS buffer by addition of a thin In based mixture layer. It is shown that the presence of thin Inx(OH,S)y at the CIGS absorber/CdS or ZnS buffer interfaces greatly improve the solar cell performances. The performances of CIGS cells using dual buffer layers composed of Inx(OH,S)y/CdS or Inx(OH,S)y/ZnS increased by 22.4% and 51.6%, as compared to the single and standard CdS or ZnS buffered cells, respectively.

Original languageEnglish
Pages (from-to)333-337
Number of pages5
JournalThin Solid Films
Volume520
Issue number1
DOIs
StatePublished - 31 Oct 2011

Keywords

  • Buffer layer
  • Chemical bath deposition
  • Cu(In,Ga)Se
  • Selenization
  • Thin film solar cells

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