Crystallization process of amorphous GaSb5Te4 film for high-speed phase change memory

Yegang Lu; Sannian Song; Zhitang Song; Wanchun Ren; Yan Cheng; Bo Liu

doi:10.1143/APEX.4.094102

Crystallization process of amorphous GaSb₅Te₄ film for high-speed phase change memory

Yegang Lu^*
, Sannian Song
, Zhitang Song
, Wanchun Ren
, Yan Cheng
, Bo Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

GaSb₅Te₄ material was used as the storage medium of phase change memory. The switching between amorphous and crystalline states could be triggered by an electric pulse as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 6:7 × 10⁴ cycles. The temperature for 10 year data retention was about 104 °C higher than that of Ge₂Sb₂Te₅. The crystallization process in GaSb₅Te₄ film is found to be the random formation of prism-shaped crystallites different from that of Ge2Sb2Te5. The formation of the percolation path for conductivity is the main reason for the fast switching.

Original language	English
Article number	094102
Journal	Applied Physics Express
Volume	4
Issue number	9
DOIs	https://doi.org/10.1143/APEX.4.094102
State	Published - Sep 2011
Externally published	Yes

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title = "Crystallization process of amorphous GaSb5Te4 film for high-speed phase change memory",

abstract = "GaSb5Te4 material was used as the storage medium of phase change memory. The switching between amorphous and crystalline states could be triggered by an electric pulse as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 6:7 × 104 cycles. The temperature for 10 year data retention was about 104 °C higher than that of Ge2Sb2Te5. The crystallization process in GaSb5Te4 film is found to be the random formation of prism-shaped crystallites different from that of Ge2Sb2Te5. The formation of the percolation path for conductivity is the main reason for the fast switching.",

author = "Yegang Lu and Sannian Song and Zhitang Song and Wanchun Ren and Yan Cheng and Bo Liu",

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T1 - Crystallization process of amorphous GaSb5Te4 film for high-speed phase change memory

AU - Lu, Yegang

AU - Song, Sannian

AU - Song, Zhitang

AU - Ren, Wanchun

AU - Cheng, Yan

AU - Liu, Bo

PY - 2011/9

Y1 - 2011/9

N2 - GaSb5Te4 material was used as the storage medium of phase change memory. The switching between amorphous and crystalline states could be triggered by an electric pulse as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 6:7 × 104 cycles. The temperature for 10 year data retention was about 104 °C higher than that of Ge2Sb2Te5. The crystallization process in GaSb5Te4 film is found to be the random formation of prism-shaped crystallites different from that of Ge2Sb2Te5. The formation of the percolation path for conductivity is the main reason for the fast switching.

AB - GaSb5Te4 material was used as the storage medium of phase change memory. The switching between amorphous and crystalline states could be triggered by an electric pulse as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 6:7 × 104 cycles. The temperature for 10 year data retention was about 104 °C higher than that of Ge2Sb2Te5. The crystallization process in GaSb5Te4 film is found to be the random formation of prism-shaped crystallites different from that of Ge2Sb2Te5. The formation of the percolation path for conductivity is the main reason for the fast switching.

UR - https://www.scopus.com/pages/publications/80052575549

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DO - 10.1143/APEX.4.094102

M3 - 文章

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VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

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ER -

Crystallization process of amorphous GaSb₅Te₄ film for high-speed phase change memory

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