Crystallinity improvement of Hg_1-xCd_xTe films grown by a liquid-phase epitaxial technique

Work was done, with emphasis on modifying substrate orientation and liquid-phase epitaxy (LPE) mode, to improve the crystallinity of Hg_1-xCd_xTe epitaxial layers. The results show that the epilayers grown on the 1.2°-2° off (1 1 1)A substrate exhibit better crystal quality and fewer Te precipitates than those grown on other tilted substrates. Further, an adequate meltetch of substrate before LPE provides a fresh surface for epitaxial growth, while a meltetch of the epilayer at the end of LPE prevents spurious growth and melt sticking.