Crystallinity and ferroelectricity of MOD-derived Pb0.985La0.01 (Zr0.4Ti0.6)O3 thin films

Jian Hua Ma; Xiang Jian Meng; Jing Lan Sun; Jun Hao Chu

Crystallinity and ferroelectricity of MOD-derived Pb_0.985La_0.01 (Zr_0.4Ti_0.6)O₃ thin films

Jian Hua Ma^*
, Xiang Jian Meng
, Jing Lan Sun
, Jun Hao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Pb_0.985La_0.01 (Zr, Ti)O₃ (PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380°C displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.

Original language	English
Pages (from-to)	163-168
Number of pages	6
Journal	Wuji Cailiao Xuebao/Journal of Inorganic Materials
Volume	20
Issue number	1
State	Published - Jan 2005
Externally published	Yes

Keywords

Crystallinity
Ferroelectricity
Intermediate pre-annealing process
PLZT thin films

Cite this

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title = "Crystallinity and ferroelectricity of MOD-derived Pb0.985La0.01 (Zr0.4Ti0.6)O3 thin films",

abstract = "Pb0.985La0.01 (Zr, Ti)O3 (PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380°C displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.",

keywords = "Crystallinity, Ferroelectricity, Intermediate pre-annealing process, PLZT thin films",

author = "Ma, \{Jian Hua\} and Meng, \{Xiang Jian\} and Sun, \{Jing Lan\} and Chu, \{Jun Hao\}",

year = "2005",

month = jan,

language = "英语",

volume = "20",

pages = "163--168",

journal = "Wuji Cailiao Xuebao/Journal of Inorganic Materials",

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}

TY - JOUR

T1 - Crystallinity and ferroelectricity of MOD-derived Pb0.985La0.01 (Zr0.4Ti0.6)O3 thin films

AU - Ma, Jian Hua

AU - Meng, Xiang Jian

AU - Sun, Jing Lan

AU - Chu, Jun Hao

PY - 2005/1

Y1 - 2005/1

N2 - Pb0.985La0.01 (Zr, Ti)O3 (PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380°C displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.

AB - Pb0.985La0.01 (Zr, Ti)O3 (PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380°C displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.

KW - Crystallinity

KW - Ferroelectricity

KW - Intermediate pre-annealing process

KW - PLZT thin films

UR - https://www.scopus.com/pages/publications/15944394772

M3 - 文章

AN - SCOPUS:15944394772

SN - 1000-324X

VL - 20

SP - 163

EP - 168

JO - Wuji Cailiao Xuebao/Journal of Inorganic Materials

JF - Wuji Cailiao Xuebao/Journal of Inorganic Materials

IS - 1

ER -

Crystallinity and ferroelectricity of MOD-derived Pb_0.985La_0.01 (Zr_0.4Ti_0.6)O₃ thin films

Abstract

Keywords

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